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EM48BM1684LBB-6FE 参数 Datasheet PDF下载

EM48BM1684LBB-6FE图片预览
型号: EM48BM1684LBB-6FE
PDF下载: 下载PDF文件 查看货源
内容描述: [DRAM]
分类和应用: 动态存储器
文件页数/大小: 22 页 / 224 K
品牌: EOREX [ EOREX CORPORATION ]
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EM48BM1684LBB  
Extended Mode Register Set ( EMRS )  
The Extended mode register is written by asserting low on /CS, /RAS, /CAS, /WE and high on BA1 ( The DDR  
SDRAM should be in all bank precharge with CKE already prior to writing into the extended mode register. ) The  
state of address pins A0-A10 and BA1 in the same cycle as /CS, /RAS, /CAS, and /WE going low is written in the  
extended mode register. The mode register contents can be changed using the same command and clock cycle  
requirements during operation as long as all banks are in the idle state. A0 is used for DLL enable or disable.  
High on BA0 is used for EMRS. All the other address pins except A0 and BA0 must be set to low for proper  
EMRS operation.  
BA1 BA0  
A11  
0
A10  
0
A9  
0
A8  
0
A7  
0
A6  
A5  
A4  
0
A3  
0
A2  
A1  
A0  
1
0
DS  
PASR  
Self Refresh Coverage A2 A1 A0  
All Banks  
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
Two Banks (BA1=0)  
One Bank (BA0=BA1=0)  
Reserved  
Reserved  
Reserved  
Reserved  
Reserved  
Driver Strength  
full  
A6  
A5  
0
0
0
1
1
1/2 Strength  
1/4 Strength  
Reserved  
1
0
1
BA1  
MRS  
0
1
Normal  
EMRS  
Nov. 2010  
www.eorex.com  
14/22  
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