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EM47FM3288SBA-125 参数 Datasheet PDF下载

EM47FM3288SBA-125图片预览
型号: EM47FM3288SBA-125
PDF下载: 下载PDF文件 查看货源
内容描述: [16Gb (64M×8Bank×32) Double DATA RATE 3 Stack SDRAM]
分类和应用: 动态存储器
文件页数/大小: 40 页 / 1121 K
品牌: EOREX [ EOREX CORPORATION ]
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EM47FM3288SBA  
AC Operating Test Characteristics  
(VDD, VDDQ=1.5V±0.075V)  
Speed Bin  
-125 (DDR3-1600)  
-150 (DDR3-1333)  
Notes  
Symbol  
CL-nRCD-nRP  
Parameter  
11-11-11  
9-9-9  
Max.  
Units  
nCK  
Min.  
Max.  
Min.  
ODT to power-down entry/ exit  
latency  
tANPD  
WL–1  
-
WL–1  
-
ODTLon  
ODTLoff  
ODT turn on latency  
ODT turn off latency  
WL–2  
WL–2  
WL–2  
WL–2  
WL–2  
WL–2  
WL–2  
WL–2  
nCK  
nCK  
ODT latency for changing from  
RTT_Nom to RTT_WR  
ODTLcnw  
ODTLcwn4  
ODTLcwn8  
WL–2  
WL–2  
WL–2  
WL–2  
nCK  
nCK  
nCK  
ODT latency for changing from  
RTT_WR to RTT_Nom (BC4)  
4+ODTLoff  
6+ODTLoff  
4+ODTLoff  
6+ODTLoff  
-
-
-
-
ODT latency for changing from  
RTT_WR to RTT_Nom (BL8)  
Note 1: Actual value dependant upon measurement level definitions which are TBD.  
Note 2: Commands requiring a locked DLL are: READ (and READA) and synchronous ODT commands.  
Note 3: The max values are system dependent.  
Note 4: WR as programmed in mode register.  
Note 5: Value must be rounded-up to next higher integer value.  
Note 6: There is no maximum cycle time limit besides the need to satisfy the refresh interval, tREFI.  
Note 7: ODT turn on time (min.) is when the device leaves high impedance and ODT resistance begins to turn  
on. ODT turn on time (max.) is when the ODT resistance is fully on. Both are measured from ODTLon.  
Note 8: ODT turn-off time (min.) is when the device starts to turn-off ODT resistance. ODT turn-off time (max.)  
is when the bus is in high impedance. Both are measured from ODTLoff.  
Note 9: tWR is defined in ns, for calculation of tWRPDEN it is necessary to round up tWR / tCK to the next  
integer.  
Note 10: WR in clock cycles as programmed in MR0.  
Note 11: The maximum read postamble is bound by tDQSCK(min) plus tQSH(min) on the left side and  
tHZ(DQS)max on the right side.  
Note 12: Output timing deratings are relative to the SDRAM input clock. When the device is operated with input  
clock jitter, this parameter needs to be derated by TBD.  
Note 13: Value is only valid for RON34.  
Note 14: Single ended signal parameter. Refer to the section of tLZ(DQS), tLZ(DQ), tHZ(DQS), tHZ(DQ) Notes  
for definition and measurement method.  
Note 15: tREFI depends on operating case temperature (Tc).  
Note 16: tIS(base) and tIH(base) values are for 1V/ns command/ addresss single-ended slew rate and 2V/ns  
CK, /CK differential slew rate, Note for DQ and DM signals, VREF(DC) = VREFDQ(DC). For input only pins  
except RESET, VREF(DC) = VREFCA(DC). See Address / Command Setup, Hold and Derating section.  
Note 17: tDS(base) and tDH(base) values are for 1V/ns DQ single-ended slew rate and 2V/ns DQS, /DQS  
differential slew rate. Note for DQ and DM signals, VREF(DC)= VREFDQ(DC). For input only pins except  
RESET, VREF(DC) = VREFCA(DC). See Data Setup, Hold and and Slew Rate Derating section.  
Jul. 2012  
24/40  
www.eorex.com  
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