EM47FM3288SBA
AC Operating Test Characteristics
(VDD, VDDQ=1.5V±0.075V)
-125
(DDR3-1600)
-150
(DDR3-1333)
Speed Bin
Notes
20,21
Symbol
Units
nCK
CL-nRCD-nRP
11-11-11
9-9-9
Parameter
Min.
Max.
Min.
1
Max.
Timing of REF command to power-
tREFPDEN
1
-
-
down entry
Timing of MRS command to power-
down entry
tMOD
(min)
tMOD
(min)
tMRSPDEN
-
-
-
-
-
-
tCPDED
Command pass disable delay
1
1
nCK
nCK
Timing of ACT command to power-
down entry
tACTPDEN
1
1
20
20
Timing of PRE command to power-
down entry
tPRPDEN
1
-
1
-
nCK
Timing of RD/RDA command to
power-down entry
RL + 4
+1
RL + 4
+ 1
tRDPDEN
tAON
-
-
nCK
ps
RTT turn-on
-225
225
8.5
-250
250
8.5
7
8
Asynchronous RTT turn-on delay
(Power-down with DLL frozen)
tAONPD
2
2
ns
RTT_Nom and RTT_WR turn-off time
from ODTLoff reference
tCK
(avg)
tAOF
tAOFPD
ODTH4
ODTH8
tADC
0.3
2
0.7
8.5
-
0.3
2
0.7
8.5
-
Asynchronous RTT turn-off delay
(Power-down with DLL frozen)
ns
ODT high time without write command
or with write command and BC4
4
4
nCK
nCK
ODT high time with write command
and BL8
6
-
6
-
tCK
(avg)
RTT dynamic change skew
0.3
0.7
0.3
0.7
tZQinit
tZQoper
tZQCS
Power-up and reset calibration time
Normal operation full calibration time
Normal operation short calibration time
512
256
64
-
-
-
512
256
64
-
-
-
nCK
nCK
nCK
23
3
First DQS pulse rising edge after write
leveling mode is programmed
tWLMRD
40
25
-
-
40
-
-
nCK
nCK
DQS./DQS delay after write leveling
mode is programmed
tWLDQSEN
25
3
RL +
CCD/2 +
2nCK-W
L
RL + tCCD/2
+
2nCK-WL
Read to write command delay
(BC4MRS, BC4OTF)
t
tRTW
-
-
RL +
CCD/2 +
2nCK-W
L
RL + tCCD/2
+
2nCK-WL
Read to write command delay
(BL8MRS, BL8OTF)
t
tRTW
-
-
-
-
Active to read with auto precharge
command delay
tRCD
min
tRAP
tRCD min
Jul. 2012
22/40
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