EM47FM0888SBA
VDD/VDDQ = 1.5V±0.075V
-150
(DDR3-1333)
-187
(DDR3-1066)
Speed Bin
Symbol
Units
nCK
Notes
CL-nRCD-nRP
Parameter
9-9-9
7-7-7
Min.
Min.
1
Max.
Max.
-
Timing of REF command to power-
down entry
20,2
1
-
-
1
tREFPDEN
tMRSPDEN
Timing of MRS command to power-
down entry
-
tMOD (min)
tMOD (min)
Command pass disable delay
1
1
-
-
1
1
-
-
nCK
nCK
tCPDED
Timing of ACT command to power-
down entry
20
20
tACTPDEN
Timing of PRE command to power-
down entry
1
-
-
1
-
-
nCK
nCK
tPRPDEN
tRDPDEN
Timing of RD/RDA command to
power-down entry
RL + 4 +1
RL + 4 +1
RTT turn-on
-250
2
250
8.5
-300
2
300
8.5
ps
ns
7
8
tAON
Asynchronous RTT turn-on delay
(Power-down with DLL frozen)
tAONPD
RTT_Nom and RTT_WR turn-off time
from ODTLoff reference
tCK
(avg)
0.3
2
0.7
8.5
0.3
2
0.7
8.5
tAOF
Asynchronous RTT turn-off delay
(Power-down with DLL frozen)
ns
tAOFPD
ODT high time without write
command or with write command and
BC4
ODTH4
4
-
4
-
nCK
nCK
ODT high time with write command
and BL8
ODTH8
6
-
6
-
tCK
(avg)
RTT dynamic change skew
0.3
0.7
0.3
0.7
tADC
Power-up and reset calibration time
Normal operation full calibration time
512
256
-
-
512
256
-
-
nCK
nCK
tZQinit
tZQoper
Normal operation short calibration
time
64
40
25
-
-
64
40
25
-
-
nCK
nCK
nCK
23
3
tZQCS
First DQS pulse rising edge after
write leveling mode is programmed
tWLMRD
DQS./DQS delay after write leveling
mode is programmed
-
-
-
-
-
-
-
-
3
tWLDQSEN
tRTW
Read to write command delay
(BC4MRS, BC4OTF)
RL + tCCD/2 +
2nCK-WL
RL + tCCD/2 +
2nCK-WL
Read to write command delay
(BL8MRS, BL8OTF)
RL + tCCD/2 +
2nCK-WL
RL + tCCD/2 +
2nCK-WL
tRTW
Active to read with auto precharge
command delay
tRAP
tRCD min
tRCD min
Jul. 2012
19/39
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EOREX [ EOREX CORPORATION ]
