EM47EM0888SBA
AC Operating Test Characteristics
(VDD, VDDQ=1.5V±0.075V)
-150
(DDR3-1333)
-187
(DDR3-1066)
Speed Bin
Notes
Symbol
Units
nCK
CL-nRCD-nRP
9-9-9
7-7-7
Min.
Parameter
Min.
Max.
Max.
-
Timing of REF command to power-
20,2
1
tREFPDEN
1
-
1
down entry
Timing of MRS command to power-
down entry
tMRSPDEN
tMOD (min)
-
-
-
tMOD (min)
-
-
-
tCPDED
Command pass disable delay
1
1
1
1
nCK
nCK
Timing of ACT command to power-
down entry
tACTPDEN
20
20
Timing of PRE command to power-
down entry
tPRPDEN
1
-
1
-
nCK
Timing of RD/RDA command to
power-down entry
tRDPDEN
tAON
RL + 4 +1
-
RL + 4 +1
-
nCK
ps
RTT turn-on
-250
2
250
8.5
-300
2
300
8.5
7
8
Asynchronous RTT turn-on delay
(Power-down with DLL frozen)
tAONPD
ns
RTT_Nom and RTT_WR turn-off time
from ODTLoff reference
tCK
(avg)
tAOF
0.3
2
0.7
8.5
0.3
2
0.7
8.5
Asynchronous RTT turn-off delay
(Power-down with DLL frozen)
tAOFPD
ns
ODT high time without write
command or with write command and
BC4
ODTH4
4
-
4
-
nCK
nCK
ODT high time with write command
and BL8
ODTH8
tADC
6
-
6
-
tCK
(avg)
RTT dynamic change skew
0.3
0.7
0.3
0.7
tZQinit
Power-up and reset calibration time
Normal operation full calibration time
512
256
-
-
512
256
-
-
nCK
nCK
tZQoper
Normal operation short calibration
time
tZQCS
64
40
25
-
-
64
40
25
-
-
nCK
nCK
nCK
23
3
First DQS pulse rising edge after
write leveling mode is programmed
tWLMRD
DQS./DQS delay after write leveling
mode is programmed
tWLDQSEN
tRTW
-
-
-
-
-
-
-
-
3
Read to write command delay
(BC4MRS, BC4OTF)
RL + tCCD/2 +
2nCK-WL
RL + tCCD/2 +
2nCK-WL
Read to write command delay
(BL8MRS, BL8OTF)
RL + tCCD/2 +
2nCK-WL
RL + tCCD/2 +
2nCK-WL
tRTW
Active to read with auto precharge
command delay
tRAP
tRCD min
tRCD min
Apr. 2012
20/39
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