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EM47CM1688SBB-150 参数 Datasheet PDF下载

EM47CM1688SBB-150图片预览
型号: EM47CM1688SBB-150
PDF下载: 下载PDF文件 查看货源
内容描述: [DRAM]
分类和应用: 动态存储器
文件页数/大小: 38 页 / 595 K
品牌: EOREX [ EOREX CORPORATION ]
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EM47CM1688SBB  
Recommended DC Operating Conditions  
(VDD,VDDQ=1.5V±0.075V)  
-125  
-150  
Symbol  
Parameter & Test Conditions  
Units  
mA  
Max  
Operating One Bank Active-Read-Precharge Current:  
CKE: High; External clock: On; tCK, nRC, nRAS, nRCD, CL: see  
timing used table; BL: 81; AL: 0; /CS: High between ACT, RD and  
PRE; Command, Address, Data IO: partially toggling; DM:stable at 0;  
Bank Activity: Cycling with one bank active at a time; Output Buffer  
and RTT: Enabled in Mode Registers; ODT Signal: stable at 0  
IDD1  
120  
115  
Precharge Power-Down Current Fast Exit:  
CKE: Low; External clock: On; tCK, CL: see timing used table; BL: 8;  
AL: 0; /CS: stable at 1; Command, Address: stable at 0; Data IO:  
FLOATING; DM: stable at 0; Bank Activity: all banks closed; Output  
Buffer and RTT: Enabled in Mode Registers; ODT Signal: stable at 0;  
Pre-charge Power Down Mode: Fast Exit  
IDD2P1  
30  
25  
mA  
Precharge Standby Current:  
CKE: High; External clock: On; tCK, CL: see timing used table; BL: 8;  
AL: 0; /CS: stable at 1; Command, Address: partially toggling; Data  
IO: FLOATING; DM:stable at 0; Bank Activity: all banks closed;  
Output Buffer and RTT: Enabled in Mode Registers; ODT Signal:  
stable at 0  
IDD2N  
40  
35  
35  
30  
mA  
mA  
Active Power-Down Current:  
CKE: Low; External clock: On; tCK, CL: see timing used table; BL: 8;  
AL: 0; /CS: stable at 1; Command, Address: stable at 0; Data IO:  
FLOATING; DM: stable at 0; Bank Activity: all banks open; Output  
Buffer and RTT: Enabled in Mode Registers; ODT Signal: stable at 0  
IDD3P  
Operating Burst Write Current:  
CKE: High; External clock: On; tCK, CL: see timing used table; BL: 8;  
AL: 0; /CS: High between WR; Command, Address: partially toggling;  
Data IO: seamless write data burst with different data between one  
burst and the next one; DM: stable at 0; Bank Activity: all banks open,  
WR commands cycling through banks: 0,0,1,1,2,2,...; Output Buffer  
and RTT: Enabled in Mode Registers; ODT Signal: stable at HIGH  
IDD4W  
220  
190  
mA  
Operating Burst Read Current:  
CKE: High; External clock: On; tCK, CL: see timing used table; BL: 8;  
AL: 0; /CS: High between RD; Command, Address: par-tially toggling;  
Data IO: seamless read data burst with different data between one  
burst and the next one; DM: stable at 0; Bank Activity: all banks open,  
RD commands cycling through banks: 0,0,1,1,2,2,...; Output Buffer  
and RTT: Enabled in Mode Registers; ODT Signal: stable at 0  
IDD4R  
230  
170  
200  
160  
mA  
mA  
Burst Refresh Current:  
CKE: High; External clock: On; tCK, CL, nRFC: see timing used  
table; BL: 8; AL: 0; /CS: High between REF; Command, Address:  
partially toggling; Data IO: FLOATING; DM: stable at 0; Bank Activity:  
REF command every nRFC; Output Buffer and RTT: Enabled in  
Mode Registers; ODT Signal: stable at 0  
IDD5B  
Jun. 2012  
13/38  
www.eorex.com