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EM44CM0884LBA_15 参数 Datasheet PDF下载

EM44CM0884LBA_15图片预览
型号: EM44CM0884LBA_15
PDF下载: 下载PDF文件 查看货源
内容描述: [Double DATA RATE 2 SDRAM]
分类和应用: 动态存储器
文件页数/大小: 28 页 / 778 K
品牌: EOREX [ EOREX CORPORATION ]
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EM44CM0884LBA  
Output Drive Strength  
The output drive strength is defined by bit A1. Normal drive strength outputs are specified to be SSTL_18.  
Programming bit A1 = 0 selects normal (100 %) drive strength for all outputs.  
Programming bit A1 = 1 will reduce all outputs to approximately 60 % of the SSTL_18 drive strength.  
This option is intended for the support of the lighter load and/or point-to-point environments.  
Single-ended and Differential Data Strobe Signals  
EMRS  
Strobe Function Matrix  
/RDQS DQS  
Signals  
A11  
A10  
RDQS  
DM  
/DQS  
(/RDQS Enable) (/DQS Enable)  
0 (Disable)  
0 (Disable)  
1 (Enable)  
0 (Enable)  
1 (Disable)  
0 (Enable)  
DM  
Hi-Z  
Hi-Z  
DQS  
DQS  
/DQS  
Hi-Z  
Differential DQS signal  
Single-ended DQS signal  
Differential DQS signal  
DM  
RDQS  
/RDQS DQS  
Hi-Z DQS  
/DQS  
1 (Enable)  
1 (Disable)  
RDQS  
Hi-Z  
Single-ended DQS signal  
Output Disable (Qoff)  
Under normal operation, the DRAM outputs are enabled during Read operation for driving data Qoff bit in the  
EMRS(1) is set to (0). When the Qoff bit is set to 1, the DRAM outputs will be disabled. Disabling the DRAM  
outputs allows users to measure IDD currents during Read operations, without including the output buffer  
current.  
Dec. 2014  
25/28  
www.eorex.com  
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