EN29LV641H/L EN29LV640U
Waveform
Waveform
DC Characteristics
Table 11. DC Characteristics
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Input Leakage Current
±5
35
±5
µA
µA
µA
I
0V≤ V ≤ VCC
LI
IN
A9, ACC Input Load Current
Output Leakage Current
A9 = 11.5V
I
LIT
I
0V≤ V
≤ VCC
OUT
LO
CE# = V ; OE# =
IL
Supply Current (read)
9
16
30
mA
mA
I
I
CC1
CC2
V
f = 5MHZ
IH ;
CE# = V , OE# =
IL
20
Supply Current (Program or Erase)
Supply Current (Standby - CMOS)
V
IH
, WE# = V
IL
CE# = BYTE# =
RESET# = VCC
0.3V
±
1
1
1
5.0
5.0
µA
mA
uA
I
I
I
CC3
CC4
CC5
(Note 1)
RESET# = VSS ± 0.3V
Reset Current
V
V
= VCC ± 0.3V
= VSS ± 0.3V,
IH
5.0
0.8
IL
Automatic Sleep Mode
WP# = V
IH
Input Low Voltage
-0.5
V
V
V
V
V
V
V
IL
0.7 x
VCC
Vcc ±
0.3
Input High Voltage
V
IH
Voltage for ACC Program Acceleration
10.5
11.5
11.5
0.45
V
HH
Voltage for Autoselect or Temporary
Sector Unprotect
10.5
V
ID
Output Low Voltage
V
I
= 4.0 mA
= -2.0 mA
OL
OL
0.85 x
VCC
VCC
Output High Voltage TTL
I
OH
V
OH
-
Output High Voltage CMOS
V
V
I
= -100 µA,
OH
0.4V
Supply voltage (Erase and Program
lock-out)
V
2.3
2.5
LKO
Notes:
1. Maximum ICC specifications are tested with VCC = V max.
CC
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
©2005 Eon Silicon Solution, Inc., www.essi.com.tw
31
Rev. B, Issue Date: 2005/06/27
EON [ EON SILICON SOLUTION INC. ]
