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EN29LV160AT-90TIP 参数 Datasheet PDF下载

EN29LV160AT-90TIP图片预览
型号: EN29LV160AT-90TIP
PDF下载: 下载PDF文件 查看货源
内容描述: 16兆位( 2048K X 8位/ 1024 KX 16位)闪存 [16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY]
分类和应用: 闪存存储内存集成电路光电二极管
文件页数/大小: 43 页 / 410 K
品牌: EON [ EON SILICON SOLUTION INC. ]
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EN29LV160A  
Table 12. AC CHARACTERISTICS  
Read-only Operations Characteristics  
Parameter  
Symbols  
Speed Options  
Test  
Description  
Setup  
JEDEC  
Standard  
-70  
-90  
Unit  
Min  
70  
90  
ns  
Read Cycle Time  
tAVAV  
tRC  
CE# = VIL  
OE#= VIL  
Max  
Max  
Max  
Max  
Max  
Min  
70  
70  
30  
20  
20  
0
90  
90  
35  
20  
20  
0
ns  
ns  
ns  
ns  
ns  
ns  
Address to Output Delay  
tAVQV  
tELQV  
tGLQV  
tEHQZ  
tGHQZ  
tAXQX  
tACC  
tCE  
tOE  
tDF  
Chip Enable To Output Delay  
Output Enable to Output Delay  
Chip Enable to Output High Z  
Output Enable to Output High Z  
OE#= VIL  
tDF  
Output Hold Time from  
Addresses, CE# or OE#,  
whichever occurs first  
tOH  
Notes:  
For - 70  
Vcc = 3.0V ± 5%  
Output Load : 1 TTL gate and 30pF  
Input Rise and Fall Times: 5ns  
Input Rise Levels: 0.0 V to 3.0 V  
Timing Measurement Reference Level, Input and Output: 1.5 V  
For all others:  
Vcc = 2.7V – 3.6V  
Output Load: 1 TTL gate and 100 pF  
Input Rise and Fall Times: 5 ns  
Input Pulse Levels: 0.45 V to .8 x Vcc  
Timing Measurement Reference Level, Input and Output: 0.8 V and .7 x Vcc  
tRC  
Addresses Stable  
tACC  
Addresses  
CE#  
tDF  
tOE  
OE#  
tOEH  
WE#  
tCE  
tOH  
HIGH Z  
Output Valid  
Outputs  
Reset#  
RY/BY#  
0V  
Figure 5. AC Waveforms for READ Operations  
This Data Sheet may be revised by subsequent versions  
or modifications due to changes in technical specifications.  
©2004 Eon Silicon Solution, Inc., www.essi.com.tw  
29  
Rev. C, Issue Date: 2005/01/07  
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