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EN29LV320AB-70BIP 参数 Datasheet PDF下载

EN29LV320AB-70BIP图片预览
型号: EN29LV320AB-70BIP
PDF下载: 下载PDF文件 查看货源
内容描述: 32兆位( 4096K ×8位/ 2048K ×16位)闪存引导扇区快闪记忆体, CMOS 3.0伏只 [32 Megabit (4096K x 8-bit / 2048K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only]
分类和应用: 闪存存储
文件页数/大小: 49 页 / 411 K
品牌: EON [ EON SILICON SOLUTION INC. ]
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EN29LV320A  
This device enters the CFI Query mode when the system writes the CFI Query command, 98h, to  
address 55h in word mode (or address AAh in byte mode), any time the device is ready to read  
array data.  
The system can read CFI information at the addresses given in Tables 5-8.In word mode, the upper  
address bits (A7–MSB) must be all zeros. To terminate reading CFI data, the system must write the  
reset command.  
The system can also write the CFI query command when the device is in the autoselect mode. The  
device enters the CFI query mode and the system can read CFI data at the addresses given in  
Tables 5–8. The system must write the reset command to return the device to the autoselect mode.  
Table 5. CFI Query Identification String  
Addresses  
Adresses  
(Word Mode) (Byte Mode)  
Data  
Description  
10h  
11h  
12h  
13h  
14h  
15h  
16h  
17h  
18h  
19h  
1Ah  
20h  
22h  
24h  
26h  
28h  
2Ah  
2Ch  
2Eh  
30h  
32h  
34h  
0051h  
0052h Query Unique ASCII string “QRY”  
0059h  
0002h  
0000h  
0040h  
Primary OEM Command Set  
Address for Primary Extended Table  
0000h  
0000h  
0000h  
0000h  
Alternate OEM Command set (00h = none exists)  
Address for Alternate OEM Extended Table (00h = none exists)  
0000h  
Table 6. System Interface String  
Addresses  
Addresses  
(Word Mode) (Byte Mode)  
Data  
Description  
0027h Vcc Min (write/erase)  
DQ7-DQ4: volt, DQ3 –DQ0: 100 millivolt  
0036h Vcc Max (write/erase)  
DQ7-DQ4: volt, DQ3 –DQ0: 100 millivolt  
0000h Vpp Min. voltage (00h = no Vpp pin present)  
0000h Vpp Max. voltage (00h = no Vpp pin present)  
1Bh  
1Ch  
36h  
38h  
1Dh  
1Eh  
1Fh  
20h  
21h  
22h  
23h  
24h  
25h  
26h  
3Ah  
3Ch  
3Eh  
40h  
42h  
44h  
46h  
48h  
4Ah  
4Ch  
Typical timeout per single byte/word write 2N μS  
0004h  
0000h  
Typical timeout for Min, size buffer write 2N μS (00h = not supported)  
000Ah Typical timeout per individual block erase 2N ms  
0000h Typical timeout for full chip erase 2N ms (00h = not supported)  
0005h Max. timeout for byte/word write 2N times typical  
0000h Max. timeout for buffer write 2N times typical  
0004h Max. timeout per individual block erase 2N times typical  
0000h Max timeout for full chip erase 2N times typical (00h = not supported)  
Table 7. Device Geometry Definition  
Addresses  
(Word mode)  
27h  
Addresses  
(Byte Mode)  
4Eh  
Data  
0016h  
0002h  
0000h  
Description  
Device Size = 2N bytes  
28h  
29h  
50h  
52h  
Flash Device Interface description (refer to CFI publication 100)  
This Data Sheet may be revised by subsequent versions  
or modifications due to changes in technical specifications.  
©2004 Eon Silicon Solution, Inc., www.essi.com.tw  
16  
Rev. B, Issue Date: 2007/07/17  
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