Preliminary EN29GL064
AC CHARACTERISTICS
Table 21. Write (Erase/Program) Operations
Alternate CE# Controlled Writes
Parameter
Speed
Symbols
Description
Unit
JEDEC
Standard
-70
Min
Min
Min
Min
Min
70
ns
ns
ns
ns
ns
tAVAV
tAVEL
tELAX
tDVEH
tEHDX
tWC
Write Cycle Time
0
45
30
0
tAS
tAH
tDS
tDH
Address Setup Time
Address Hold Time
Data Setup Time
Data Hold Time
Read Recovery Time before
Write (OE# High to CE# Low)
Min
Min
Min
Min
Min
0
0
ns
ns
ns
ns
ns
tGHEL
tWLEL
tEHWH
tELEH
tEHEL
tGHEL
tWS
tWH
tCP
WE# SetupTime
0
WE# Hold Time
35
20
Write Pulse Width
Write Pulse Width High
tCPH
Write Buffer Program Operation
(Note 2, 3)
Typ
115.2
µs
tWHWH1 tWHWH1
Typ
8
µs
µs
Programming Operation
(Byte AND word mode)
Max
200
Typ
0.1
2
s
s
tWHWH2 tWHWH2
Sector Erase Operation
Max
Notes: 1. Not 100% tested.
2. See table.23 Erase and Programming Performance for more information.
3. For 1~16 words bytes programmed.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc., www.eonssi.com
53
Rev. A, Issue Date: 2009/3/20
EON [ EON SILICON SOLUTION INC. ]
