Preliminary EN29GL064
AC CHARACTERISTICS
Table 20. Write (Erase/Program) Operations
Parameter
Speed
Symbols
Description
Unit
JEDEC
Standard
-70
Min
Min
Min
Min
Min
70
ns
ns
ns
ns
ns
tAVAV
tAVWL
tWLAX
tDVWH
tWHDX
tWC
Write Cycle Time
0
45
30
0
tAS
tAH
tDS
tDH
Address Setup Time
Address Hold Time
Data Setup Time
Data Hold Time
MIn
Min
0
ns
ns
Read
Toggle and
DATA# Polling
Output Enable
Hold Time
tOEH
10
Read Recovery Time before
Write (OE# High to WE# Low)
Min
Min
Min
Min
Min
0
0
ns
ns
ns
ns
ns
tGHWL
tELWL
tWHEH
tWLWH
tWHDL
tGHWL
tCS
CE# SetupTime
CE# Hold Time
0
tCH
35
20
tWP
Write Pulse Width
tWPH
Write Pulse Width High
Write Buffer Program
Operation (Note 2, 3)
Typ
115.2
µs
tWHWH1 tWHWH1
Typ
8
µs
µs
Programming Operation
(Word AND Byte Mode)
Max
200
Typ
0.1
2
s
s
tWHWH2 tWHWH2
tWHWH3 tWHWH3
Sector Erase Operation
Max
Typ
16
s
Chip Erase Operation
VHH Rise and Fall Time
Min
Min
Max
Min
250
50
70
0
ns
µs
ns
ns
tVHH
tVCS
tBUSY
tRB
Vcc Setup Time
B
WE# High to RY/BY# Low
Recovery Time from RY/BY#
Notes: 1. Not 100% tested.
2. See table.23 Erase and Programming Performance for more information.
3. For 1~16 words bytes programmed.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc., www.eonssi.com
52
Rev. A, Issue Date: 2009/3/20
EON [ EON SILICON SOLUTION INC. ]
