EN25S10
Revisions List
Revision No Description
Date
A
Preliminary version
2009/03/11
1. Update Block and Chip erase time (typ.) parameter on page 1 and 26.
(1). Block erase: from 0.4s to 0.3s
B
(2). Chip erase: from 0.5s to 1.2s
2009/09/08
2. Add the description of OTP erase command on page 10 and page 23.
3. Remove 3Bh, BBh functions and relevant descriptions.
1. Update DC Characteristics in Table 9 on page 25.
(1). Icc3 (Read) from 14mA to 12mA for 75MHz
Icc3 (Read) from 11mA to 9mA for 33MHz
(2). Icc4 (PP) from 15mA to 22mA.
(3). Icc5 (WRSR) from 15mA to 22mA
(4). Icc6 (SE) from 15mA to 22mA
(5). Icc7 (BE) from 15mA to 22mA
C
D
2010/04/13
(6). VIL from 0.2Vcc to 0.3Vcc (max.)
2. Update AC Characteristics in Table 11 on page 26.
(1). TCLQV from 8ns to 11ns (max.).
(2). TW from 20ms / 50ms to 10ms / 15ms (typ. / max.)
(3). Page Program time from 1.3ms to 1.5ms (typ.)
(4). Block Erase time from 2s to 1.2s (max.)
(5). Chip Erase time from 1.2s / 4s to 1s/ 3s (typ./max.)
Update AC Characteristics in Table 11 on page 26
2010/7/29
(1) tCLQV from 11ns to 9ns (max.)
E
F
Remove the package option of 8-pin VDFN (2x3mm).
Add 8-pin USON (2x3 mm) package option.
2011/06/14
2011/11/07
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc.,
www.eonssi.com
34
Rev. F, Issue Date: 2011/11/07
EON [ EON SILICON SOLUTION INC. ]
