EN25S10
Table 12. DATA RETENTION and ENDURANCE
Parameter Description
Data Retention Time
Test Conditions
Min
Unit
150°C
125°C
10
Years
20
Years
cycles
Erase/Program Endurance
-40 to 85 °C
100k
Table 13. CAPACITANCE
( VCC = 1.65-1.95V)
Parameter Symbol
Parameter Description
Test Setup
Typ
Max
Unit
C
V
= 0
IN
IN
Input Capacitance
Output Capacitance
6
pF
C
OUT
V
OUT
= 0
8
pF
Note : Sampled only, not 100% tested, at T = 25°C and a frequency of 20MHz.
A
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc.,
www.eonssi.com
29
Rev. F, Issue Date: 2011/11/07
EON [ EON SILICON SOLUTION INC. ]
