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EN25S20-75WIP 参数 Datasheet PDF下载

EN25S20-75WIP图片预览
型号: EN25S20-75WIP
PDF下载: 下载PDF文件 查看货源
内容描述: 2兆位1.8V串行闪存与4K字节扇区制服 [2 Megabit 1.8V Serial Flash Memory with 4Kbyte Uniform Sector]
分类和应用: 闪存
文件页数/大小: 34 页 / 564 K
品牌: EON [ EON SILICON SOLUTION INC. ]
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EN25S20  
MEMORY ORGANIZATION  
The memory is organized as:  
z
z
262,144 bytes  
Uniform Sector Architecture  
4 blocks of 64-Kbyte  
64 sectors of 4-Kbyte  
1024 pages (256 bytes each)  
z
Each page can be individually programmed (bits are programmed from 1 to 0). The device is Sector,  
Block or Chip Erasable but not Page Erasable.  
Table 2. Uniform Block Sector Architecture  
Sector  
63  
62  
61  
60  
Address range  
Block  
03F000h  
03E000h  
03D000h  
03C000h  
03B000h  
03FFFFh  
03EFFFh  
03DFFFh  
03CFFFh  
03BFFFh  
3
59  
48  
47  
030000h  
02F000h  
030FFFh  
02FFFFh  
2
1
32  
31  
020000h  
01F000h  
020FFFh  
01FFFFh  
16  
15  
010000h  
00F000h  
010FFFh  
00FFFFh  
4
3
2
1
0
004000h  
003000h  
002000h  
001000h  
000000h  
004FFFh  
003FFFh  
002FFFh  
001FFFh  
000FFFh  
0
This Data Sheet may be revised by subsequent versions  
or modifications due to changes in technical specifications.  
©2004 Eon Silicon Solution, Inc., www.eonssi.com  
5
Rev. H, Issue Date: 2011/11/07