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EN25Q128-104FIP 参数 Datasheet PDF下载

EN25Q128-104FIP图片预览
型号: EN25Q128-104FIP
PDF下载: 下载PDF文件 查看货源
内容描述: 128兆位串行闪存与4K字节扇区制服 [128 Megabit Serial Flash Memory with 4Kbyte Uniform Sector]
分类和应用: 闪存
文件页数/大小: 57 页 / 1077 K
品牌: EON [ EON SILICON SOLUTION INC. ]
 浏览型号EN25Q128-104FIP的Datasheet PDF文件第49页浏览型号EN25Q128-104FIP的Datasheet PDF文件第50页浏览型号EN25Q128-104FIP的Datasheet PDF文件第51页浏览型号EN25Q128-104FIP的Datasheet PDF文件第52页浏览型号EN25Q128-104FIP的Datasheet PDF文件第53页浏览型号EN25Q128-104FIP的Datasheet PDF文件第54页浏览型号EN25Q128-104FIP的Datasheet PDF文件第55页浏览型号EN25Q128-104FIP的Datasheet PDF文件第56页  
EN25Q128  
Revisions List  
Revision No Description  
Date  
A
Initial Release  
2009/07/13  
1. Update Page programming, Sector, Block and Chip erase time (typ.)  
and (max.) parameter on page 1 and 50.  
(1). Page programming: from 1.3ms to 0.8ms (typ.)  
, from 5ms to 3ms (max.)  
(2). Sector erase: from 0.06s to 0.05s (typ.)  
, from 0.3s to 0.25s (max.)  
B
2009/09/03  
(3). Block erase: from 0.25s to 0.2s (typ.)  
, from 2s to 1.6s (max.)  
(4). Chip erase: from 50s to 45s (typ.)  
, from 100s to 90s (max.)  
2. Add Figure 23. Write Suspend/Resume Flow on page 39  
1. Add VDFN 8 ( 6 x 8 mm ) dimension on page 55.  
2. Modify Table 10. DC Characteristics I  
(Standby) and I  
(Deep  
CC2  
C
D
2009/10/21  
2010/02/04  
CC1  
Power-down) Current from 5µA to 20µA on page 49.  
1. Add 24-ball Ball Grid Array (6 x 8 mm) package option.  
2. Remove Write Suspend and Write Resume information.  
3. Modify Software Reset Latency from 20µs to 28µs on page 47.  
1. Update AC Characteristics in Table 11 on page 47.  
(1). Page Programming time from 3ms to 5ms (max.)  
(2). Sector Erase time from 0.25s to 0.3s (max.)  
(3). Block Erase time from 1.6s to 2s (max.)  
1. Rename 38h command from Enable Quad I/O (EQIO) to Enable Quad  
Peripheral Interface mode (EQPI).  
2. Revise the speed of Quad SPI from 80MHz to 50MHz.  
1. Update Write Status Register Cycle Time from 10 (typ.) /15 (max.) ms to 15  
(typ.) / 50 (max.) ms on page 47.  
E
F
2010/04/19  
2011/01/10  
2011/04/19  
G
2. Remove the package option of 8 contact VDFN (5x6mm).  
3. Rename 24 Ball package from BGA to TFBGA.  
1. Add the note “5. This flow cannot release the device from Deep power  
down mode.” on page 19.  
2. Correct the typo of 6 dummy clocks for EBh command on page 29.  
3. Update Chip Erase Time (max.) from 90s to 140s on page 47.  
Add Automotive (-40°C to +125°C) grade temperature option.  
Add VDFN 8 ( 5 x 6 mm ) package option.  
H
2011/07/01  
I
J
2011/09/06  
2011/09/19  
This Data Sheet may be revised by subsequent versions  
or modifications due to changes in technical specifications.  
©2004 Eon Silicon Solution, Inc., www.eonssi.com  
57  
Rev. J, Issue Date: 2011/09/19  
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