EN25Q128
Table 12. DATA RETENTION and ENDURANCE
Parameter Description
Test Conditions
Min
Unit
150°C
10
Years
Data Retention Time
125°C
20
Years
cycles
Erase/Program Endurance
-40 to 85 °C
100k
Table 13. CAPACITANCE
( VCC = 2.7-3.6V)
Parameter Symbol
Parameter Description
Test Setup
Max
Unit
C
IN
V
IN
= 0
Input Capacitance
6
pF
C
OUT
V
OUT
= 0
Output Capacitance
8
pF
Note : Sampled only, not 100% tested, at T = 25°C and a frequency of 20MHz.
A
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc., www.eonssi.com
50
Rev. J, Issue Date: 2011/09/19