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EN25B40-75HI 参数 Datasheet PDF下载

EN25B40-75HI图片预览
型号: EN25B40-75HI
PDF下载: 下载PDF文件 查看货源
内容描述: 4兆位串行闪存与引导和参数部门 [4 Mbit Serial Flash Memory with Boot and Parameter Sectors]
分类和应用: 闪存存储
文件页数/大小: 36 页 / 462 K
品牌: EON [ EON SILICON SOLUTION INC. ]
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EN25B40  
(2) Change 64KB Sector erase time 0.3 / 0.6 seconds to  
0.8 / 2 seconds for typical and maximum  
(3) Change 16KB Sector erase time 0.15 / 0.3 seconds to  
0.5 / 1 seconds for typical and maximum  
(4) Change 4KB Sector erase time 0.1 / 0.2 seconds to  
0.3 / 0.6 seconds for typical and maximum  
(5) Change Chip erase time 2.7 / 5.4 seconds to 5 / 10  
seconds for typical and maximum  
5. Add 8-pin PDIP in Package Mechanical in page 32  
6. Add 8-pin PDIP package option ‘Q’ and 75MHz option to  
ordering information in page 33  
E
1.  
2007/5/3  
Change Table 7 Write Inhibit Voltage (Max) from 2V to 2.5V  
in page 22  
2. Change Table 8. DC Characteristics VIL Max from 0.3 VCC to  
0.2 VCC in page 23  
3. Change Table 10. 75MHz AC Characteristics tCLQV Max  
from 6 ns to 8 ns in page 24  
This Data Sheet may be revised by subsequent versions  
or modifications due to changes in technical specifications.  
©2004 Eon Silicon Solution, Inc., www.essi.com.tw  
36  
Rev. E, Issue Date: 2007/5/3  
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