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EN25B40-75HI 参数 Datasheet PDF下载

EN25B40-75HI图片预览
型号: EN25B40-75HI
PDF下载: 下载PDF文件 查看货源
内容描述: 4兆位串行闪存与引导和参数部门 [4 Mbit Serial Flash Memory with Boot and Parameter Sectors]
分类和应用: 闪存存储
文件页数/大小: 36 页 / 462 K
品牌: EON [ EON SILICON SOLUTION INC. ]
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EN25B40  
Revisions List  
Revision No Description  
Date  
A
B
C
Advanced Information  
Initial release  
1. Add op-code: 9Fh and its description in page 21  
2. Add 3 specific op-codes to IDs in Table 5 of page 10  
3. Change note 5 description in page 10  
4. Change the description of FEATURES in page 1  
(1) byte program time from 8 to 7µs,  
2005/11/2  
2006/03/24  
2006/08/04  
(2) add page program time: 1.4ms,  
(3) sector erase time from  
“150ms to 500ms” to “100ms to 300ms”  
(4) chip erase time from 4.5 sec to 2.7 sec  
5. Change Table 10 AC Characteristics in page 24  
(1) Data in Setup Time from 5ns to 2ns,  
(2) 64KB sector erase time from 0.5 sec to 0.3 sec typical  
64KB sector erase time from 1 sec to 0.6 sec max.  
(3) 16KB sector erase time from 0.2 sec to 0.15 sec typical  
16KB sector erase time from 0.4 sec to 0.3 sec max.  
(4) 4KB sector erase time from 0.15 sec to 0.1 sec typical  
4KB sector erase time from 0.3 sec to 0.2 sec max.  
(5) bulk erase time from 4.5 sec to 2.7 sec typical  
bulk erase time from 9 sec to 5.4 sec max.  
6. Change I in Table 8 from 10µA to 20µA in page 23  
, I  
CC1 CC2  
7. Add INSTRUCTIONS description in page 9  
D
1.  
2007/01/09  
Change clock rate from 50MHz to 75MHz,  
Page program time 1.4 ms typical to 1.5 ms typical  
Sector erase time 100 to 300 ms typical to 300 to 800 ms  
Chip erase time 2.7 seconds to 5 seconds typical  
Add 8 pin PDIP for package options in page 1  
2. Change Table 8 DC Characteristics in page 23  
(1) Add I  
for 75MHz  
CC3  
3. Change Table 10 to 75MHz AC Characteristics in page 24  
(1) Change FR from 50 to 75MHz  
(2) Change fR from 33 to 50MHz  
(3) Change tCLH from 9ns to 6ns  
(4) Change tCLL from 9ns to 6ns  
(5) Change tSHQZ from 9ns to 6ns  
(6) Change tHLQZ from 9ns to 6ns  
(7) Change tHHQZ from 9ns to 6ns  
(8) Change tCLQV from 9ns to 6ns  
(9) Change Page program time 1.4ms typical to 1.5ms  
(10)Change 64KB Sector erase time 0.3 / 0.6 seconds to  
0.8 / 2 seconds for typical and maximum  
(11)Change 16KB Sector erase time 0.15 / 0.3 seconds to  
0.5 / 1 seconds for typical and maximum  
(12)Change 4KB Sector erase time 0.1 / 0.2 seconds to  
0.3 / 0.6 seconds for typical and maximum  
(13)Change Chip erase time 2.7 / 5.4 seconds to 5 / 10  
seconds for typical and maximum  
4. Add Table 11: 50MHz AC Characteristics in page 25  
(1) Change Page program time 1.4ms typical to 1.5ms  
This Data Sheet may be revised by subsequent versions  
or modifications due to changes in technical specifications.  
©2004 Eon Silicon Solution, Inc., www.essi.com.tw  
35  
Rev. E, Issue Date: 2007/5/3  
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