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EN25B10-75VC 参数 Datasheet PDF下载

EN25B10-75VC图片预览
型号: EN25B10-75VC
PDF下载: 下载PDF文件 查看货源
内容描述: 1兆位串行闪存与引导和参数部门 [1 Mbit Serial Flash Memory with Boot and Parameter Sectors]
分类和应用: 闪存
文件页数/大小: 31 页 / 386 K
品牌: EON [ EON SILICON SOLUTION INC. ]
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EN25B10  
Power-up Timing  
Figure 19. Power-up Timing  
Table 7. Power-Up Timing and Write Inhibit Threshold  
Symbol  
Parameter  
Min.  
Max.  
Unit  
µs  
(1)  
VCC(min) to CS# low  
10  
1
tVSL  
(1)  
Time delay to Write instruction  
Write Inhibit Voltage  
10  
2
ms  
V
tPUW  
(1)  
1
VWI  
Note:  
1.The parameters are characterized only.  
INITIAL DELIVERY STATE  
The device is delivered with the memory array erased: all bits are set to 1 (each byte contains FFh). The  
Status Register contains 00h (all Status Register bits are 0).  
This Data Sheet may be revised by subsequent versions  
or modifications due to changes in technical specifications.  
©2004 Eon Silicon Solution, Inc., www.essi.com.tw  
21  
Rev. B, Issue Date: 2006/12/26  
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