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EN25B10-75VC 参数 Datasheet PDF下载

EN25B10-75VC图片预览
型号: EN25B10-75VC
PDF下载: 下载PDF文件 查看货源
内容描述: 1兆位串行闪存与引导和参数部门 [1 Mbit Serial Flash Memory with Boot and Parameter Sectors]
分类和应用: 闪存
文件页数/大小: 31 页 / 386 K
品牌: EON [ EON SILICON SOLUTION INC. ]
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EN25B10  
Read Identification (RDID)(9Fh)  
The Read Identification (RDID) instruction allows the 8-bit manufacturer identification to be read, followed  
by two bytes of device identification. The device identification indicates the memory type in the first byte ,  
and the memory capacity of the device in the second byte .  
Any Read Identification (RDID) instruction while an Erase or Program cycle is in progress, is not decoded,  
and has no effect on the cycle that is in progress. The Read Identification (RDID) instruction should not be  
issued while the device is in Deep Power down mode.  
The device is first selected by driving Chip Select Low. Then, the 8-bit instruction code for the instruction  
is shifted in. This is followed by the 24-bit device identification, stored in the memory, being shifted out on  
Serial Data Output , each bit being shifted out during the falling edge of Serial Clock . The instruction  
sequence is shown in Figure 18. The Read Identification (RDID) instruction is terminated by driving Chip  
Select High at any time during data output.  
When Chip Select is driven High, the device is put in the Standby Power mode. Once in the Standby  
Power mode, the device waits to be selected, so that it can receive, decode and execute instructions.  
Figure 18. Read Identification (RDID)  
This Data Sheet may be revised by subsequent versions  
or modifications due to changes in technical specifications.  
©2004 Eon Silicon Solution, Inc., www.essi.com.tw  
20  
Rev. B, Issue Date: 2006/12/26  
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