EM3027
8.7
EEPROM memory
Before any EEPROM access (read/write), the bit EERefOn has to be cleared by the application to prevent from access
collision with the Configuration Registers.
Then the application has to read EEBusy bit and if EEBusy = ‘0’, then EEPROM access can be started.
After the write command (at “Transmission STOP”) the current state of EEPROM writing is monitored by EEBusy register bit
at ‘1’. EEBusy goes to ‘0’ when EEPROM writing is finished.
NOTE: VCC must be applied during the whole EEPROM write (i.e. until EEBusy = ‘0’) and must be higher than Vprog
.
Clear EERefOn
Clear EERefOn
No
No
EEBusy = 0 ?
EEBusy = 0 ?
Yes
Yes
Write EEPROM
Read EEPROM
Yes
No
EEBusy = 0 ?
Yes
Next read ?
No
Set EERefOn
Yes
Next Write ?
No
Set EERefOn
After EEPROM write command, EEBusy bit is set to ‘1’ for a time period depending on that how many bytes of EEPROM
Data or Control page were written:
EEPROM Write Operation
Any write operation into EEPROM Data page
(one or two bytes within one transaction)
Single byte write operation into EEPROM Control page
Multiple byte write operation into EEPROM Control page
(two, three or four bytes within one transaction)
EEBusy bit set to ‘1’ for [ms]
35
97
<135
8.7.1
EEPROM Control Page
This part is composed of 4 bytes purposed for miscellaneous function control and for crystal compensation constants.
EEctrl byte contains: trickle charger selectors (R80k, R20k, R5k, R1.5k); output clock frequency selector (FD1, FD0);
thermometer enable and thermometer period selector.
17
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Copyright 2013, EM Microelectronic-Marin SA
3027-DS.doc, Version 8.0, 25-Jan-13
EMMICRO [ EM MICROELECTRONIC - MARIN SA ]
