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EM625FS16E10S 参数 Datasheet PDF下载

EM625FS16E10S图片预览
型号: EM625FS16E10S
PDF下载: 下载PDF文件 查看货源
内容描述: 256K ×8位低功耗和低电压全CMOS静态RAM [256K x8 bit Low Power and Low Voltage Full CMOS Static RAM]
分类和应用:
文件页数/大小: 11 页 / 427 K
品牌: EMLSI [ Emerging Memory & Logic Solutions Inc ]
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EM620FV8B Series  
Low Power, 256Kx8 SRAM  
Document Title  
256K x8 bit Low Power and Low Voltage Full CMOS Static RAM  
Revision History  
RevisionNo.  
History  
Draft Date  
Remark  
0.0  
Initial Draft  
June 7, 2007  
0.1  
0.2  
0.3  
0.1 Revision  
0.2 Revision  
0.3 Revision  
Remove BYTE option information  
Remove UB, LB information  
June 15, 2007  
June 21, 2007  
July 2, 2007  
Revised VOH(2.2v to 2.4v),tOH(15ns to 10ns),  
tOE-55(30ns to 25ns), tWP-55(45ns to 40ns),  
tWP-70(55ns to 50ns), tWHZ-70(25ns to 20ns),  
ICC(2mA to 3mA), ICC1(2mA to 3mA)  
0.4  
0.4 Revision  
VIH level change from 2.0V to 2.2V  
Aug. 16, 2007  
Emerging Memory & Logic Solutions Inc.  
4F Korea Construction Financial Cooperative B/D, 301-1 Yeon-Dong, Jeju-Si, Jeju-Do, Rep.of Korea Zip Code : 690-719  
Tel : +82-64-740-1712 Fax : +82-64-740-1749~1750 / Homepage : www.emlsi.com  
The attached data sheets are provided by EMLSI reserve the right to change the specifications and products. EMLSI will answer to your  
questions about device. If you have any questions, please contact the EMLSI office.  
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