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EM625FS16E10S 参数 Datasheet PDF下载

EM625FS16E10S图片预览
型号: EM625FS16E10S
PDF下载: 下载PDF文件 查看货源
内容描述: 256K ×8位低功耗和低电压全CMOS静态RAM [256K x8 bit Low Power and Low Voltage Full CMOS Static RAM]
分类和应用:
文件页数/大小: 11 页 / 427 K
品牌: EMLSI [ Emerging Memory & Logic Solutions Inc ]
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EM620FV8B Series  
Low Power, 256Kx8 SRAM  
TIMING DIAGRAMS  
TIMING WAVEFORM OF READ CYCLE(1) (Address Controlled, CS1=OE=V , CS2=WE=V )  
IL  
IH  
tRC  
Address  
Data Out  
tAA  
tOH  
Previous Data Valid  
Data Valid  
TIMING WAVEFORM OF READ CYCLE(2) (WE = V )  
IH  
tRC  
Address  
tAA  
tOH  
tCO  
CS1  
CS2  
tHZ  
tOE  
OE  
tOHZ  
tOLZ  
High-Z  
Data Out  
Data Valid  
tWHZ  
tLZ  
NOTES (READ CYCLE)  
1. tHZ and tOHZ are defined as the outputs achieve the open circuit conditions and are not referenced to output voltage levels.  
2. At any given temperature and voltage condition, tHZ(Max.) is less than tLZ(Min.) both for a given device and from device to device  
interconnection.  
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