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EM25LV010-33RKGBS 参数 Datasheet PDF下载

EM25LV010-33RKGBS图片预览
型号: EM25LV010-33RKGBS
PDF下载: 下载PDF文件 查看货源
内容描述: 1兆位( 128K ×8 )串行闪存 [1 Megabit (128K x 8) Serial Flash Memory]
分类和应用: 闪存
文件页数/大小: 30 页 / 536 K
品牌: ELAN [ ELAN MICROELECTRONICS CORP ]
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EM25LV010  
1 Megabit (128K x 8) Serial Flash Memory  
SPECIFICATION  
General Description  
The EM25LV010 is a 1 M bits Flash memory organized as 128K x 8 bits and uses a single  
voltage of 2.7-3.6V for Program and Erase. It features a typical 2ms Page-Program time and  
a typical 40ms Block-Erase time. The device uses status register to detect the completion of  
the Program or Erase operation. To protect against inadvertent write, the device has on-chip  
hardware and software data protection schemes. The device offers typical 100,000 cycles  
endurance and a greater than 10 years data retention. The EM25LV010 conforms to SPI  
Bus compatible Serial Interface. It consisted of four pins (serial clock, chip select, serial data  
in, and serial data out) that support high-speed serial data transfers of up to 33MHz. The  
Hold pin, Write Protect pin, and Programmable Write Protect features provide flexible control.  
The EM25LV010 is offered in 8-lead SO package and known good die (KGD). For KGD,  
please contact ELAN Microelectronics or its representatives for detailed information (see  
Appendix at the bottom of this specification for Ordering Information).  
The EM25LV010 devices are suitable for applications that require memories with convenient  
and economical updating of program, data or configurations, e.g., graphic cards, hard disk  
drives, networking cards, digital camera printer, LCD monitors, cordless Phones, etc.  
Features  
Single Power Supply  
Erase Features  
Full voltage range from 2.7 to 3.6  
volts for both read and write operations  
Block-Erase Time: 40ms (Typical)  
Chip-Erase Time: 40ms (Typical)  
Regulated voltage range: 3.0 to 3.6  
volts for both read and write operations  
Small block Erase Capability  
Automatic Write Timing  
Block: Uniform 32K bytes  
Internal VPP Generation  
Clock Rate  
SPI Bus Compatible Serial Interface  
33MHz (Maximum)  
Power Consumption  
High Reliability:  
Active Current: 4mA (Typical)  
Endurance cycles: 100K (Typical)  
Data retention: 10 years  
Power-down Mode Standby  
current: 1µA (Typical)  
Page Program Features  
Package Option  
Up to 256 Bytes in 2ms (Typical)  
8-lead-SO (150 mil)  
This specification is subject to change without further notice. (11.08.2004 V1.0)  
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