HM5225165B-75/A6/B6
HM5225805B-75/A6/B6
HM5225405B-75/A6/B6
256M LVTTL interface SDRAM
133 MHz/100 MHz
4-Mword × 16-bit × 4-bank/8-Mword × 8-bit × 4-bank
/16-Mword × 4-bit × 4-bank
PC/133, PC/100 SDRAM
E0082H10 (1st edition)
(Previous ADE-203-1073B (Z))
Jan. 31, 2001
Description
The HM5225165B is a 256-Mbit SDRAM organized as 4194304-word × 16-bit × 4 bank. The HM5225805B
is a 256-Mbit SDRAM organized as 8388608-word × 8-bit × 4 bank. The HM5225405B is a 256-Mbit
SDRAM organized as 16777216-word × 4-bit × 4 bank. All inputs and outputs are referred to the rising edge
of the clock input. It is packaged in standard 54-pin plastic TSOP II.
Features
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3.3 V power supply
Clock frequency: 133 MHz/100 MHz (max)
LVTTL interface
Single pulsed RAS
4 banks can operate simultaneously and independently
Burst read/write operation and burst read/single write operation capability
Programmable burst length: 1/2/4/8
2 variations of burst sequence
Sequential (BL = 1/2/4/8)
Interleave (BL = 1/2/4/8)
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Programmable CAS latency: 2/3
Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.
ELPIDA [ ELPIDA MEMORY ]
