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HM5225805BLTT-75 参数 Datasheet PDF下载

HM5225805BLTT-75图片预览
型号: HM5225805BLTT-75
PDF下载: 下载PDF文件 查看货源
内容描述: LVTTL 256M SDRAM接口的133 MHz / 100 MHz的4 Mword 】 16位】 4银行/ 8 - Mword 】 8位】 4银行/ 16 Mword 】 4位】 4银行PC / 133 , PC / 100 SDRAM [256M LVTTL interface SDRAM 133 MHz/100 MHz 4-Mword 】 16-bit 】 4-bank/8-Mword 】 8-bit 】 4-bank /16-Mword 】 4-bit 】 4-bank PC/133, PC/100 SDRAM]
分类和应用: 存储内存集成电路光电二极管动态存储器PC时钟
文件页数/大小: 63 页 / 454 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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HM5225165B/HM5225805B/HM5225405B-75/A6/B6  
Pin Functions  
CLK (input pin): CLK is the master clock input to this pin. The other input signals are referred at CLK  
rising edge.  
CS (input pin): When CS is Low, the command input cycle becomes valid. When CS is High, all inputs are  
ignored. However, internal operations (bank active, burst operations, etc.) are held.  
RAS, CAS, and WE (input pins): Although these pin names are the same as those of conventional DRAMs,  
they function in a different way. These pins define operation commands (read, write, etc.) depending on the  
combination of their voltage levels. For details, refer to the command operation section.  
A0 to A12 (input pins): Row address (AX0 to AX12) is determined by A0 to A12 level at the bank active  
command cycle CLK rising edge. Column address (AY0 to AY8; HM5225165B, AY0 to AY9;  
HM5225805B, AY0 to AY9, AY11; HM5225405B) is determined by A0 to A8, A9 or A11 (A8;  
HM5225165B, A9; HM5225805B, A9, A11; HM5225405B) level at the read or write command cycle CLK  
rising edge. And this column address becomes burst access start address. A10 defines the precharge mode.  
When A10 = High at the precharge command cycle, all banks are precharged. But when A10 = Low at the  
precharge command cycle, only the bank that is selected by BA0/BA1 (BS) is precharged. For details refer to  
the command operation section.  
BA0/BA1 (input pin): BA0/BA1 are bank select signal (BS). The memory array of the HM5225165B,  
HM5225805B, the HM5225405B is divided into bank 0, bank 1, bank 2 and bank 3. HM5225165B contain  
8192-row × 512-column × 16-bit. HM5225805B contain 8192-row × 1024-column× 8-bit. HM5225405B  
contain 8192-row × 2048-column × 4-bit. If BA0 is Low and BA1 is Low, bank 0 is selected. If BA0 is Low  
and BA1 is High, bank 1 is selected. If BA0 is High and BA1 is Low, bank 2 is selected. If BA0 is High and  
BA1 is High, bank 3 is selected.  
CKE (input pin): This pin determines whether or not the next CLK is valid. If CKE is High, the next CLK  
rising edge is valid. If CKE is Low, the next CLK rising edge is invalid. This pin is used for power-down  
mode, clock suspend mode and self refresh mode.  
DQM, DQMU/DQML (input pins): DQM, DQMU/DQML controls input/output buffers.  
Read operation: If DQM, DQMU/DQML is High, the output buffer becomes High-Z. If the DQM,  
DQMU/DQML is Low, the output buffer becomes Low-Z. (The latency of DQM, DQMU/DQML during  
reading is 2 clocks.)  
Write operation: If DQM, DQMU/DQML is High, the previous data is held (the new data is not written). If  
DQM, DQMU/DQML is Low, the data is written. (The latency of DQM, DQMU/DQML during writing is 0  
clock.)  
DQ0 to DQ15 (DQ pins): Data is input to and output from these pins (DQ0 to DQ15; HM5225165B, DQ0  
to DQ7; HM5225805B, DQ0 to DQ3; HM5225405B).  
VCC and VCCQ (power supply pins): 3.3 V is applied. (VCC is for the internal circuit and VCCQ is for the  
output buffer.)  
Data Sheet E0082H10  
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