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EDS2532EGBH-7BTT-F 参数 Datasheet PDF下载

EDS2532EGBH-7BTT-F图片预览
型号: EDS2532EGBH-7BTT-F
PDF下载: 下载PDF文件 查看货源
内容描述: 256M位的SDRAM WTR (宽温度范围) [256M bits SDRAM WTR (Wide Temperature Range)]
分类和应用: 存储内存集成电路动态存储器
文件页数/大小: 50 页 / 719 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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EDS2532EGBH-TT  
Write command to Precharge command interval (same bank)  
When the precharge command is executed for the same bank as the write command that preceded it, the minimum  
interval between the two commands is 1 clock. However, if the burst write operation is unfinished, the input data  
must be masked by means of DQM for assurance of the clock defined by tDPL.  
CLK  
PRE/PALL  
WRIT  
in A0  
Command  
DQM  
DQ  
in A1  
in A2  
tDPL  
WRITE to PRECHARGE Command Interval (same bank) (BL = 4 (To stop write operation))  
CLK  
PRE/PALL  
Command  
DQM  
WRIT  
in A0  
DQ  
in A1  
in A2  
in A3  
tDPL  
WRITE to PRECHARGE Command Interval (same bank) (BL = 4 (To write all data))  
Preliminary Data Sheet E1200E40 (Ver. 4.0)  
37  
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