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EDS2532EGBH-7BTT-F 参数 Datasheet PDF下载

EDS2532EGBH-7BTT-F图片预览
型号: EDS2532EGBH-7BTT-F
PDF下载: 下载PDF文件 查看货源
内容描述: 256M位的SDRAM WTR (宽温度范围) [256M bits SDRAM WTR (Wide Temperature Range)]
分类和应用: 存储内存集成电路动态存储器
文件页数/大小: 50 页 / 719 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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EDS2532EGBH-TT  
Read command to Precharge command interval (same bank)  
When the precharge command is executed for the same bank as the read command that preceded it, the minimum  
interval between the two commands is one clock. However, since the output buffer then becomes High-Z after the  
clocks defined by lHZP, there is a case of interruption to burst read data output will be interrupted, if the precharge  
command is input during burst read. To read all data by burst read, the clocks defined by lEP must be assured as  
an interval from the final data output to precharge command execution.  
CLK  
PRE/PALL  
out A2  
READ  
Command  
DQ  
out A0  
out A1  
out A3  
CL=2  
lEP = -1 cycle  
READ to PRECHARGE Command Interval (same bank): To output all data (CL = 2, BL = 4)  
CLK  
PRE/PALL  
out A1  
READ  
Command  
DQ  
out A0  
out A2  
out A3  
CL=3  
lEP = -2 cycle  
READ to PRECHARGE Command Interval (same bank): To output all data (CL = 3, BL = 4)  
CLK  
PRE/PALL  
READ  
Command  
High-Z  
DQ  
out A0  
lHZP = 2  
READ to PRECHARGE Command Interval (same bank): To stop output data (CL = 2, BL = 1, 2, 4, 8)  
CLK  
PRE/PALL  
READ  
Command  
DQ  
High-Z  
out A0  
lHZP =3  
READ to PRECHARGE Command Interval (same bank): To stop output data (CL = 3, BL = 1, 2, 4, 8)  
Preliminary Data Sheet E1200E40 (Ver. 4.0)  
36  
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