欢迎访问ic37.com |
会员登录 免费注册
发布采购

EDS2532EGBH-7BTT-F 参数 Datasheet PDF下载

EDS2532EGBH-7BTT-F图片预览
型号: EDS2532EGBH-7BTT-F
PDF下载: 下载PDF文件 查看货源
内容描述: 256M位的SDRAM WTR (宽温度范围) [256M bits SDRAM WTR (Wide Temperature Range)]
分类和应用: 存储内存集成电路动态存储器
文件页数/大小: 50 页 / 719 K
品牌: ELPIDA [ ELPIDA MEMORY ]
 浏览型号EDS2532EGBH-7BTT-F的Datasheet PDF文件第25页浏览型号EDS2532EGBH-7BTT-F的Datasheet PDF文件第26页浏览型号EDS2532EGBH-7BTT-F的Datasheet PDF文件第27页浏览型号EDS2532EGBH-7BTT-F的Datasheet PDF文件第28页浏览型号EDS2532EGBH-7BTT-F的Datasheet PDF文件第30页浏览型号EDS2532EGBH-7BTT-F的Datasheet PDF文件第31页浏览型号EDS2532EGBH-7BTT-F的Datasheet PDF文件第32页浏览型号EDS2532EGBH-7BTT-F的Datasheet PDF文件第33页  
EDS2532EGBH-TT  
Burst Stop Command  
During a read cycle, when the burst stop command is issued, the burst read data are terminated and the data bus  
goes to High-Z after the /CAS latency from the burst stop command.  
CLK  
READ  
BST  
Command  
High-Z  
High-Z  
DQ  
out  
out  
out  
out  
out  
(CL = 2)  
DQ  
(CL = 3)  
out  
Burst Stop at Read  
During a write cycle, when the burst stop command is issued, the burst write data are terminated and data bus goes  
to High-Z at the same clock with the burst stop command.  
CLK  
WRITE  
in  
BST  
Command  
DQ  
High-Z  
in  
in  
in  
Burst Stop at Write  
Preliminary Data Sheet E1200E40 (Ver. 4.0)  
29  
 复制成功!