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EDS2532EGBH-7BTT-F 参数 Datasheet PDF下载

EDS2532EGBH-7BTT-F图片预览
型号: EDS2532EGBH-7BTT-F
PDF下载: 下载PDF文件 查看货源
内容描述: 256M位的SDRAM WTR (宽温度范围) [256M bits SDRAM WTR (Wide Temperature Range)]
分类和应用: 存储内存集成电路动态存储器
文件页数/大小: 50 页 / 719 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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EDS2532EGBH-TT  
Power-up sequence  
Power-up sequence  
1. Apply VDD and VDDQ at the same time. Keep CKE low during power up.  
2. Wait for stable power.  
3. Start clock and drive CKE high.  
Note: Voltage on any input pin must not exceed VDD + 0.3V during power up.  
Initialization sequence  
4. After stable power and stable clock, wait 200µs.  
5. Issue precharge all command (PALL).  
6. After tRP delay, issue 8 or more auto-refresh commands (REF).  
7. Issue the mode register set command (MRS) to program the mode register.  
If necessary, issue the extended mode register set command (EMRS) to change the default value of extended  
mode register after lMRD of the MRS command.  
Note: We recommend that you keep DQM and CKE high during initialization sequence to prevent data contention  
on the DQ bus.  
Power up sequence  
Initialization sequence  
0V  
VDD, VDDQ  
CKE  
Low  
CLK  
lRP  
lRC  
lRC  
lMRD  
Command  
PALL  
REF  
REF  
MRS  
CMD  
Power stable  
Clock stable  
Power-up sequence and Initialization sequence  
Preliminary Data Sheet E1200E40 (Ver. 4.0)  
24  
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