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EDS2532EGBH-7BTT-F 参数 Datasheet PDF下载

EDS2532EGBH-7BTT-F图片预览
型号: EDS2532EGBH-7BTT-F
PDF下载: 下载PDF文件 查看货源
内容描述: 256M位的SDRAM WTR (宽温度范围) [256M bits SDRAM WTR (Wide Temperature Range)]
分类和应用: 存储内存集成电路动态存储器
文件页数/大小: 50 页 / 719 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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EDS2532EGBH-TT  
Function Truth Table  
The following table shows the operations that are performed when each command is issued in each mode of the  
SDRAM.  
The following table assumes that CKE is high.  
Current state  
/CS  
H
L
/RAS /CAS /WE  
Address  
Command  
DESL  
Operation  
Precharge  
×
×
×
×
Enter IDLE after tRP  
Enter IDLE after tRP  
ILLEGAL  
ILLEGAL*3  
ILLEGAL*3  
ILLEGAL*3  
NOP*5  
H
H
H
H
L
H
H
L
H
L
×
NOP  
L
×
BST  
L
H
L
BA, CA, A10  
READ/READA  
WRIT/WRITA  
ACT  
L
L
BA, CA, A10  
L
H
H
L
H
L
BA, RA  
L
L
BA, A10  
PRE, PALL  
REF, SELF  
MRS  
L
L
H
L
×
ILLEGAL  
L
L
L
MODE  
ILLEGAL  
L
L
L
L
MODE  
EMRS  
ILLEGAL  
Idle  
H
L
×
×
×
×
DESL  
NOP  
H
H
H
H
L
H
H
L
H
L
×
NOP  
NOP  
L
×
BST  
ILLEGAL  
L
H
L
BA, CA, A10  
READ/READA  
WRIT/WRITA  
ACT  
ILLEGAL*4  
ILLEGAL*4  
Bank and row active  
NOP  
L
L
BA, CA, A10  
L
H
H
L
H
L
BA, RA  
L
L
BA, A10  
PRE, PALL  
REF, SELF  
MRS  
L
L
H
L
×
Refresh  
L
L
L
MODE  
Mode register set*8  
Extended mode register set*8  
NOP  
L
L
L
L
MODE  
EMRS  
Row active  
H
L
×
×
×
×
DESL  
H
H
H
H
H
H
L
H
L
×
NOP  
NOP  
L
×
BST  
ILLEGAL  
L
H
L
BA, CA, A10  
BA, CA, A10  
READ/READA  
WRIT/WRITA  
Begin read*6  
Begin write*6  
L
L
Other bank active  
L
L
H
H
BA, RA  
ACT  
ILLEGAL on same bank*2  
L
L
L
L
L
L
L
L
H
L
L
L
L
H
L
L
BA, A10  
×
PRE, PALL  
REF, SELF  
MRS  
Precharge*7  
ILLEGAL  
ILLEGAL  
ILLEGAL  
MODE  
MODE  
EMRS  
Preliminary Data Sheet E1200E40 (Ver. 4.0)  
15  
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