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EDS2532CABJ-75L-E 参数 Datasheet PDF下载

EDS2532CABJ-75L-E图片预览
型号: EDS2532CABJ-75L-E
PDF下载: 下载PDF文件 查看货源
内容描述: 256M位的SDRAM [256M bits SDRAM]
分类和应用: 存储内存集成电路动态存储器时钟
文件页数/大小: 48 页 / 637 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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EDS2532CABJ  
Burst length = 2  
Burst length = 4  
Starting Ad. Addressing(decimal)  
Starting Ad. Addressing(decimal)  
A0  
0
Sequential Interleave  
A1  
0
A0 Sequential  
Interleave  
0, 1,  
1, 0,  
0, 1,  
1, 0,  
0
1
0
1
0, 1, 2, 3,  
1, 2, 3, 0,  
2, 3, 0, 1,  
0, 1, 2, 3,  
1, 0, 3, 2,  
2, 3, 0, 1,  
3, 2, 1, 0,  
1
0
1
1
3,  
0, 1, 2,  
Burst length = 8  
Starting Ad.  
Addressing(decimal)  
A2 A1 A0 Sequential  
Interleave  
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
0, 1, 2, 3, 4, 5, 6, 7,  
1, 2, 3, 4, 5, 6, 7, 0,  
2, 3, 4, 5, 6, 7, 0, 1,  
3, 4, 5, 6, 7, 0, 1, 2,  
4, 5, 6, 7, 0, 1, 2, 3,  
5, 6, 7, 0, 1, 2, 3, 4,  
6, 7, 0, 1, 2, 3, 4, 5,  
7, 0, 1, 2, 3, 4, 5, 6,  
0, 1, 2, 3, 4, 5, 6, 7,  
1, 0, 3, 2, 5, 4, 7, 6,  
2, 3, 0, 1, 6, 7, 4, 5,  
3, 2, 1, 0, 7, 6, 5, 4,  
4, 5, 6, 7, 0, 1, 2, 3,  
5, 4, 7, 6, 1, 0, 3, 2,  
6, 7, 4, 5, 2, 3, 0, 1,  
7, 6, 5, 4, 3, 2, 1, 0,  
Burst Sequence  
Full page burst is available only for sequential addressing. The addressing sequence is started from the column  
address that is asserted by read/write command. And the address is increased one by one.  
It is back to the address 0 when the address reaches at the end of address 511. “Full page burst” stops the burst  
read/write with burst stop command.  
Data Sheet E0460E40 (Ver. 4.0)  
21  
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