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EDS2532CABJ-75L-E 参数 Datasheet PDF下载

EDS2532CABJ-75L-E图片预览
型号: EDS2532CABJ-75L-E
PDF下载: 下载PDF文件 查看货源
内容描述: 256M位的SDRAM [256M bits SDRAM]
分类和应用: 存储内存集成电路动态存储器时钟
文件页数/大小: 48 页 / 637 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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EDS2532CABJ  
Mode Register Configuration  
The mode register is set by the input to the address pins (A0 to A11, BA0 and BA1) during mode register set cycles.  
The mode register consists of five sections, each of which is assigned to address pins.  
BA1, BA0, A8, A9, A10, A11: (OPCODE): The SDRAM has two types of write modes. One is the burst write mode,  
and the other is the single write mode. These bits specify write mode.  
Burst read and burst write: Burst write is performed for the specified burst length starting from the column address  
specified in the write cycle.  
Burst read and single write: Data is only written to the column address specified during the write cycle, regardless of  
the burst length.  
A7: Keep this bit Low at the mode register set cycle. If this pin is high, the vender test mode is set.  
A6, A5, A4: (LMODE): These pins specify the /CAS latency.  
A3: (BT): A burst type is specified.  
A2, A1, A0: (BL): These pins specify the burst length.  
A11  
OPCODE  
BA1 BA0  
A10  
A9  
A8  
A7  
0
A6  
A5  
A4  
A3  
BT  
A2  
A1  
BL  
A0  
LMODE  
A6 A5 A4 CAS latency  
A3 Burst type  
Burst length  
BT=0 BT=1  
A2 A1 A0  
R
R
2
0
0
0
0
1
0
0
1
1
X
0
1
0
1
X
0
1
Sequential  
Interleave  
1
2
1
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
2
3
4
4
R
8
8
R
R
R
R
R
R
A9 A8  
Write mode  
A10  
BA1  
0
BA0  
0
A11  
R
0
X
X
X
X
X
X
0
0
0
Burst read and burst write  
F.P.  
0
1
X
X
X
X
X
X
0
0
0
0
1
1
0
0
0
1
0
1
R
1
0
R
1
1
R
R
X
X
F.P.: Full Page  
R is Reserved (inhibit)  
X: 0 or 1  
Burst read and single write  
R
X
X
X
X
Mode Register Set Timing  
Data Sheet E0460E40 (Ver. 4.0)  
20  
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