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EDS1216AABH-75-E 参数 Datasheet PDF下载

EDS1216AABH-75-E图片预览
型号: EDS1216AABH-75-E
PDF下载: 下载PDF文件 查看货源
内容描述: 128M位的SDRAM (8M字×16位) [128M bits SDRAM (8M words x 16 bits)]
分类和应用: 存储内存集成电路动态存储器时钟
文件页数/大小: 49 页 / 694 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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EDS1216AABH, EDS1216CABH  
Write operation  
Burst write or single write mode is selected by the OPCODE of the mode register.  
1. Burst write: A burst write operation is enabled by setting OPCODE (A9, A8) to (0, 0). A burst write starts in the  
same clock as a write command set. (The latency of data input is 0 clock.) The burst length can be set to 1, 2, 4  
and 8, like burst read operations. The write start address is specified by the column address and the bank select  
address at the write command set cycle.  
CLK  
tRCD  
Command  
Address  
ACT  
Row  
WRIT  
Column  
in 0  
in 0  
BL = 1  
in 1  
in 1  
in 1  
BL = 2  
BL = 4  
BL = 8  
DQ  
in 3  
in 0  
in 0  
in 2  
in 2  
in 5  
in 6 in 7  
in 3 in 4  
CL = 2, 3  
Burst write  
2. Single write: A single write operation is enabled by setting OPCODE (A9, A8) to (1, 0). In a single write  
operation, data is only written to the column address and the bank select address specified by the write  
command set cycle without regard to the burst length setting. (The latency of data input is 0 clock).  
CLK  
tRCD  
Command  
WRIT  
ACT  
Row  
Column  
Address  
DQ  
in 0  
Single write  
Data Sheet E0410E40 (Ver. 4.0)  
25  
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