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EDJ1108BABG-DG-E 参数 Datasheet PDF下载

EDJ1108BABG-DG-E图片预览
型号: EDJ1108BABG-DG-E
PDF下载: 下载PDF文件 查看货源
内容描述: 1G位DDR3 SDRAM [1G bits DDR3 SDRAM]
分类和应用: 存储内存集成电路动态存储器双倍数据速率时钟
文件页数/大小: 148 页 / 1878 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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EDJ1108BABG, EDJ1116BABG  
CKE Truth Table  
CKE  
Previous  
Current  
Command (n)*3  
/CS, /RAS, /CAS, /WE Operation (n)*3  
Current state*2  
Power-down  
cycle (n-1)*1 cycle (n)*1  
Notes  
L
L
H
L
H
L
L
L
L
L
L
L
×
Maintain power-down  
14, 15  
L
DESL or NOP  
×
Power-down exit  
11, 14  
Self-refresh  
L
Maintain self-refresh  
Self-refresh exit  
15, 16  
L
DESL or NOP  
DESL or NOP  
DESL or NOP  
DESL or NOP  
DESL or NOP  
DESL or NOP  
DESL or NOP  
REFRESH  
8, 12, 16  
11, 13, 14  
Bank Active  
Reading  
H
H
H
H
H
H
H
Active power-down entry  
Power-down entry  
11, 13, 14, 17  
11, 13, 14, 17  
Writing  
Power-down entry  
11, 13, 14, 17  
Precharging  
Refreshing  
All banks idle  
Power-down entry  
Precharge power-down entry  
Precharge power-down entry  
Self-refresh entry  
11  
11, 13, 14, 18  
9, 13, 18  
Any state other than  
listed above  
H
H
Refer to the Command Truth Table  
10  
Remark: H = VIH. L = VIL. × = Don’t care  
Notes: 1. CKE (n) is the logic state of CKE at clock edge n; CKE (n1) is the state of CKE at the previous clock  
edge.  
2. Current state is the state of the DDR3 SDRAM immediately prior to clock edge n.  
3. Command (n) is the command registered at clock edge n, and operation (n) is a result of Command (n).  
ODT is not included here.  
4. All states and sequences not shown are illegal or reserved unless explicitly described elsewhere in this  
document.  
5. The state of ODT does not affect the states described in this table. The ODT function is not available  
during self-refresh.  
6. CKE must be registered with the same value on tCKE (min.) consecutive positive clock edges. CKE must  
remain at the valid input level the entire time it takes to achieve the tCKE (min.) clocks of registration.  
Thus, after any CKE transition, CKE may not transition from its valid level during the time period of tIS +  
tCKE (min.) + tIH.  
7. DESL and NOP are defined in the Command Truth Table.  
8. On self-refresh exit, DESL or NOP commands must be issued on every clock edge occurring during the  
tXS period. Read or ODT command may be issued only after tXSDLL is satisfied.  
9. Self-refresh mode can only be entered from the all banks idle state.  
10. Must be a legal command as defined in the Command Truth Table.  
11. Valid commands for power-down entry and exit are NOP and DESL only.  
12. Valid commands for self-refresh exit are NOP and DESL only.  
13. Self-refresh can not be entered while read or write operations, (extended) mode register set operations or  
precharge operations are in progress. See section Power-Down and self-refresh Command for a detailed  
list of restrictions.  
14. The power-down does not perform any refresh operations.  
15. “×” means “don’t care” (including floating around VREF) in self-refresh and power-down. It also applies to  
address pins.  
16. VREF (Both VREFDQ and VREFCA) must be maintained during self-refresh operation.  
17. If all banks are closed at the conclusion of the read, write or precharge command, the precharge power-  
down is entered, otherwise active power-down is entered.  
18. Idle state means that all banks are closed (tRP, tDAL, etc. satisfied), no data bursts are in progress. CKE  
is high and all timings from previous operation are satisfied (tMRD, tMOD, tRFC, tZQinit, tZQoper, tZQCS,  
etc.) as well as all self-refresh exit and power-down exit parameters are satisfied (tXS, tXP, tXPDLL, etc).  
Data Sheet E1248E40 (Ver. 4.0)  
70  
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