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EDJ1108BABG-DG-E 参数 Datasheet PDF下载

EDJ1108BABG-DG-E图片预览
型号: EDJ1108BABG-DG-E
PDF下载: 下载PDF文件 查看货源
内容描述: 1G位DDR3 SDRAM [1G bits DDR3 SDRAM]
分类和应用: 存储内存集成电路动态存储器双倍数据速率时钟
文件页数/大小: 148 页 / 1878 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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EDJ1108BABG, EDJ1116BABG  
ODT Measurement Definitions  
Definitions for tAON, tAONPD, tAOF, tAOFPD and tADC are provided in the following table and subsequent figures.  
Symbol  
Begin Point Definition  
End Point Definition  
Figure  
Rising edge of CK - /CK defined by the end  
point of ODTLon  
tAON  
Extrapolated point at VSSQ  
Figure a)  
Rising edge of CK - /CK with ODT being first  
registered high  
Rising edge of CK - /CK defined by the end  
point of ODTLoff  
tAONPD  
tAOF  
Extrapolated point at VSSQ  
Figure b)  
End point: Extrapolated point at VRTT_Nom Figure c)  
Rising edge of CK - /CK with ODT being first  
registered low  
Rising edge of CK - /CK defined by the end  
point of ODTLcnw, ODTLcwn4 or ODTLcwn8  
tAOFPD  
tADC  
End point: Extrapolated point at VRTT_Nom Figure d)  
End point: Extrapolated point at VRTT_WR  
Figure e)  
and VRTT_Nom respectively  
Reference Settings for ODT Timing Measurements  
Measurement reference settings are provided in the following Table.  
Measured Parameter RTT_Nom Setting  
RTT_WR Setting  
VSW1 [V]  
VSW2 [V]  
0.10  
Note  
tAON  
RZQ/4  
N/A  
N/A  
N/A  
N/A  
N/A  
N/A  
N/A  
N/A  
RZQ/2  
0.05  
RZQ/12  
RZQ/4  
0.10  
0.20  
tAONPD  
tAOF  
0.05  
0.10  
RZQ/12  
RZQ/4  
0.10  
0.20  
0.05  
0.10  
RZQ/12  
RZQ/4  
0.10  
0.20  
tAOFPD  
tADC  
0.05  
0.10  
RZQ/12  
RZQ/12  
0.10  
0.20  
0.20  
0.30  
Begin point: Rising edge of CK - /CK  
defined by the end point of ODTLon  
CK  
VTT  
/CK  
tAON  
tSW2  
tSW1  
DQ, DM  
DQS, /DQS  
VSW2  
TDQS, /TDQS  
VSW1  
VSSQ  
VSSQ  
End point: Extrapolated point at VSSQ  
a) Definition of tAON  
Data Sheet E1248E40 (Ver. 4.0)  
29  
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