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EDJ1108BABG-DG-E 参数 Datasheet PDF下载

EDJ1108BABG-DG-E图片预览
型号: EDJ1108BABG-DG-E
PDF下载: 下载PDF文件 查看货源
内容描述: 1G位DDR3 SDRAM [1G bits DDR3 SDRAM]
分类和应用: 存储内存集成电路动态存储器双倍数据速率时钟
文件页数/大小: 148 页 / 1878 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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EDJ1108BABG, EDJ1116BABG  
tLZ (DQS), tLZ (DQ), tHZ (DQS), tHZ (DQ) Notes  
tHZ and tLZ transitions occur in the same access time as valid data transitions. These parameters are referenced to  
a specific voltage level which specifies when the device output is no longer driving tHZ(DQS) and tHZ(DQ), or begins  
driving tLZ(DQS), tLZ(DQ). The figure below shows a method to calculate the point when device is no longer driving  
tHZ(DQS) and tHZ(DQ), or begins driving tLZ(DQS), tLZ(DQ) by measuring the signal at two different voltages. The  
actual voltage measurement points are not critical as long as the calculation is consistent. The parameters  
tLZ(DQS), tLZ(DQ), tHZ(DQS), and tHZ(DQ) are defined as singled ended.  
tLZ (DQS): CK-/CK rising crossing at RL-1  
tLZ (DQ): CK-/CK rising crossing at RL  
tHZ (DQS), tHZ (DQ) with BL8: CK-/CK rising crossing at RL + 4nCK  
tHZ (DQS), tHZ (DQ) with BL4: CK-/CK rising crossing at RL + 2nCK  
VTT + 2x mV  
VOH x mV  
VOH 2x mV  
VTT + x mV  
tLZ (DQS), tLZ (DQ)  
tHZ (DQS), tHZ (DQ)  
VTT x mV  
VOL + 2x mV  
T1  
T2  
VTT 2x mV  
VOL + x mV  
T2  
T1  
tLZ (DQS), tLZ (DQ) begin point = 2 T1 - T2  
tHZ (DQS), tHZ (DQ) end point = 2 T1 - T2  
Method for Calculating Transitions and Endpoints  
Data Sheet E1248E40 (Ver. 4.0)  
101  
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