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EDJ1108BABG-AC-E 参数 Datasheet PDF下载

EDJ1108BABG-AC-E图片预览
型号: EDJ1108BABG-AC-E
PDF下载: 下载PDF文件 查看货源
内容描述: 1G位DDR3 SDRAM [1G bits DDR3 SDRAM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 148 页 / 1878 K
品牌: ELPIDA [ ELPIDA MEMORY ]
 浏览型号EDJ1108BABG-AC-E的Datasheet PDF文件第103页浏览型号EDJ1108BABG-AC-E的Datasheet PDF文件第104页浏览型号EDJ1108BABG-AC-E的Datasheet PDF文件第105页浏览型号EDJ1108BABG-AC-E的Datasheet PDF文件第106页浏览型号EDJ1108BABG-AC-E的Datasheet PDF文件第108页浏览型号EDJ1108BABG-AC-E的Datasheet PDF文件第109页浏览型号EDJ1108BABG-AC-E的Datasheet PDF文件第110页浏览型号EDJ1108BABG-AC-E的Datasheet PDF文件第111页  
EDJ1108BABG, EDJ1116BABG  
T0  
T3  
T4  
T5  
T6  
T7  
T8  
T9  
T10  
T11  
T12  
T13 T14 T15  
CK  
/CK  
Command*3  
READ  
WRIT  
NOP  
NOP  
tWR  
READ to WRIT command delay = RL + tCCD + 2tCK WL  
tBL = 4 clocks  
tWTR  
Bank  
Col n  
Bank  
Col b  
Address*4  
tRPRE  
tRPST  
tWPRE  
tWPST  
DQS, /DQS  
DQ*2  
Dout Dout Dout Dout Dout Dout Dout Dout  
Din Din Din Din  
n
n+1 n+2 n+3 n+4 n+5 n+6 n+7  
b
b+1 b+2 b+3  
RL = 5  
WL = 5  
VIH or VIL  
Notes: 1. RL = 5 (CL = 5, AL = 0), WL = 5 (CWL = 5, AL = 0).  
2. Dout n = data-out from column n, n Din b= data-in from column b.  
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.  
4. BL8 setting activated by MR0 bit [A1, A0] = [0, 1] and A12 = 1 during READ command at T0.  
BC4 setting activated by MR0 bit [A1, A0] = [0, 1] and A12 = 0 during WRIT command at T6.  
READ (BL8) to WRITE (BC4) OTF  
T0  
T1  
T2  
T3  
T4  
T5  
T6  
T7  
T8  
T9  
T10  
T11  
CK  
/CK  
Command*3  
Address*4  
PRE  
READ  
NOP  
NOP  
tRTP = 4 nCK  
tRP  
Bank  
Col n  
tRPST  
tRPRE  
DQS, /DQS  
DQ*2  
Dout Dout Dout  
n+1 n+2 n+3  
Dout Dout Dout  
n+5 n+6 n+7  
Dout  
n
Dout  
n+4  
CL = 5  
RL = AL + CL  
VIH or VIL  
Notes: 1. BL8, AL = 0, RL = 5, CL = 5  
2. Dout n = data-out from column n.  
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.  
4. BL8 setting activated by MR0 bit [A1, A0] = [0, 0] or MR0 bit [A1, A0] = [0, 1] and A12 = 1 during READ command at T0.  
Burst Read Precharge Operation, RL = 5  
Data Sheet E1248E40 (Ver. 4.0)  
107  
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