DATA SHEET
1G bits DDR3 SDRAM
EDJ1108BABG (128M words × 8 bits)
EDJ1116BABG (64M words × 16 bits)
Features
Specifications
• Density: 1G bits
• Double-data-rate architecture; two data transfers per
clock cycle
Organization
• The high-speed data transfer is realized by the 8 bits
16M words × 8 bits × 8 banks (EDJ1108BABG)
8M words × 16 bits × 8 banks (EDJ1116BABG)
• Package
78-ball FBGA (EDJ1108BABG)
96-ball FBGA (EDJ1116BABG)
Lead-free (RoHS compliant)
• Power supply: VDD, VDDQ = 1.5V ± 0.075V
• Data rate
1600Mbps/1333Mbps/1066Mbps/800Mbps (max.)
• 1KB page size (EDJ1108BABG)
Row address: A0 to A13
Column address: A0 to A9
• 2KB page size (EDJ1116BABG)
Row address: A0 to A12
Column address: A0 to A9
• Eight internal banks for concurrent operation
• Interface: SSTL_15
• Burst lengths (BL): 8 and 4 with Burst Chop (BC)
• Burst type (BT):
Sequential (8, 4 with BC)
Interleave (8, 4 with BC)
• /CAS Latency (CL): 5, 6, 7, 8, 9, 10, 11
• /CAS Write Latency (CWL): 5, 6, 7, 8
prefetch pipelined architecture
• Bi-directional differential data strobe (DQS and /DQS)
is transmitted/received with data for capturing data at
the receiver
• DQS is edge-aligned with data for READs; center-
aligned with data for WRITEs
• Differential clock inputs (CK and /CK)
• DLL aligns DQ and DQS transitions with CK
transitions
• Commands entered on each positive CK edge; data
and data mask referenced to both edges of DQS
• Data mask (DM) for write data
• Posted /CAS by programmable additive latency for
better command and data bus efficiency
• On-Die Termination (ODT) for better signal quality
Synchronous ODT
Dynamic ODT
Asynchronous ODT
• Multi Purpose Register (MPR) for temperature read
out
• ZQ calibration for DQ drive and ODT
• Programmable Partial Array Self-Refresh (PASR)
• /RESET pin for Power-up sequence and reset
function
• Precharge: auto precharge option for each burst
• SRT range:
access
Normal/extended
Auto/manual self-refresh
• Programmable Output driver impedance control
• Driver strength: RZQ/7, RZQ/6 (RZQ = 240Ω)
• Refresh: auto-refresh, self-refresh
• Refresh cycles
Average refresh period
7.8µs at 0°C ≤ TC ≤ +85°C
3.9µs at +85°C < TC ≤ +95°C
• Operating case temperature range
TC = 0°C to +95°C
Document No. E1248E40 (Ver. 4.0)
Date Published April 2009 (K) Japan
Printed in Japan
URL: http://www.elpida.com
Elpida Memory, Inc. 2007-2009
ELPIDA [ ELPIDA MEMORY ]
