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EDE5104AGSE-5C-E 参数 Datasheet PDF下载

EDE5104AGSE-5C-E图片预览
型号: EDE5104AGSE-5C-E
PDF下载: 下载PDF文件 查看货源
内容描述: 512M位DDR2 SDRAM [512M bits DDR2 SDRAM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 65 页 / 657 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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EDE5104AGSE, EDE5108AGSE  
Burst Write with Auto Precharge [WRITA]  
If A10 is high when a write command is issued, the Write with auto-precharge function is engaged. The DDR2  
SDRAM automatically begins precharge operation after the completion of the burst writes plus write recovery time  
(tWR). The bank undergoing auto-precharge from the completion of the write burst may be reactivated if the  
following two conditions are satisfied.  
(1) The data-in to bank activate delay time (tWR + tRP) has been satisfied.  
(2) The /RAS cycle time (tRC) from the previous bank activation has been satisfied.  
T0  
T1  
T2  
T3  
T4  
T5  
T6  
T7  
T12  
/CK  
CK  
A10 = 1  
Posted  
WRIT  
NOP  
Command  
ACT  
DQS, /DQS  
> tWR  
> tRP  
WL = RL –1 = 2  
=
=
in0  
in1  
in2  
in3  
DQ  
> tRC  
=
Auto Precharge Begins  
Completion of the Burst Write  
Burst Write with Auto-Precharge (tRC Limit) (WL = 2, tWR =2, tRP=3)  
T0  
T3  
T4  
T5  
T6  
T7  
T8  
T9  
T10  
/CK  
CK  
A10 = 1  
Posted  
WRIT  
Command  
NOP  
ACT  
DQS, /DQS  
> tWR  
=
WL = RL –1 = 4  
> tRP  
=
in0  
in1  
in2  
in3  
DQ  
> tRC  
=
Auto Precharge Begins  
Completion of the Burst Write  
Burst Write with Auto-Precharge (tWR + tRP) (WL = 4, tWR =2, tRP=3)  
Preliminary Data Sheet E0715E20 (Ver. 2.0)  
52  
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