欢迎访问ic37.com |
会员登录 免费注册
发布采购

EDE1108AFBG-8G-F 参数 Datasheet PDF下载

EDE1108AFBG-8G-F图片预览
型号: EDE1108AFBG-8G-F
PDF下载: 下载PDF文件 查看货源
内容描述: 1G位DDR2 SDRAM [1G bits DDR2 SDRAM]
分类和应用: 存储内存集成电路动态存储器双倍数据速率
文件页数/大小: 78 页 / 734 K
品牌: ELPIDA [ ELPIDA MEMORY ]
 浏览型号EDE1108AFBG-8G-F的Datasheet PDF文件第32页浏览型号EDE1108AFBG-8G-F的Datasheet PDF文件第33页浏览型号EDE1108AFBG-8G-F的Datasheet PDF文件第34页浏览型号EDE1108AFBG-8G-F的Datasheet PDF文件第35页浏览型号EDE1108AFBG-8G-F的Datasheet PDF文件第37页浏览型号EDE1108AFBG-8G-F的Datasheet PDF文件第38页浏览型号EDE1108AFBG-8G-F的Datasheet PDF文件第39页浏览型号EDE1108AFBG-8G-F的Datasheet PDF文件第40页  
EDE1108AFBG  
8. The minimum delay from the read, write and precharge command to the precharge command to the same  
bank is summarized below.  
[Precharge and Auto Precharge Clarification]  
Minimum delay between “From  
From command  
Read  
To command  
command” to “To command“  
AL + (BL/2) + Max.(RTP, 2) 2  
AL + (BL/2) + Max.(RTP, 2) 2  
Units  
tCK  
tCK  
tCK  
tCK  
tCK  
tCK  
tCK  
tCK  
tCK  
tCK  
tCK  
tCK  
Notes  
a, b  
a, b  
a, b  
a, b  
b
Precharge (to same bank as read)  
Precharge all  
Read w/AP  
Write  
Precharge (to same bank as read w/AP) AL + (BL/2) + Max.(RTP, 2) 2  
Precharge all  
AL + (BL/2) + Max.(RTP, 2) 2  
WL + (BL/2) + tWR  
Precharge (to same bank as write)  
Precharge all  
WL + (BL/2) + tWR  
b
Write w/AP  
Precharge  
Precharge all  
Precharge (to same bank as write w/AP) WL + (BL/2) + WR  
b
Precharge all  
WL + (BL/2) + WR  
b
Precharge (to same bank as precharge)  
Precharge all  
1
1
1
1
b
b
Precharge  
b
Precharge all  
b
a. RTP[cycles] = RU{ tRTP[ns] / tCK[ns] }, where RU stands for round up.  
tCK(avg) should be used in place of tCK for DDR2-667/800.  
b. For a given bank, the precharge period should be counted from the latest precharge command, either one  
bank precharge or precharge all, issued to that bank. The precharge period is satisfied after tRP  
depending on the latest precharge command issued to that bank.  
Preliminary Data Sheet E1430E20 (Ver. 2.0)  
36  
 复制成功!