EDE1104ABSE, EDE1108ABSE, EDE1116ABSE
-8E
800
min.
-6C, -6E
667
Frequency (Mbps)
Parameter
Symbol
tRRD
max.
min.
max.
Unit
ns
Notes
Active bank A to active bank B command
period
7.5
⎯
7.5
⎯
(EDE1104AB, EDE1108AB)
(EDE1116AB)
tRRD
tFAW
⎯
⎯
⎯
10
⎯
⎯
ns
ns
Four active window period
(EDE1104AB, EDE1108AB)
35
37.5
(EDE1116AB)
tFAW
tCCD
tWR
⎯
2
⎯
⎯
⎯
50
2
⎯
⎯
⎯
ns
/CAS to /CAS command delay
Write recovery time
nCK
ns
15
15
Auto precharge write recovery + precharge
time
WR + RU
(tRP/tCK(avg))
WR + RU
(tRP/tCK(avg))
tDAL
⎯
⎯
nCK
1, 9
Internal write to read command delay
tWTR
7.5
⎯
⎯
⎯
⎯
7.5
⎯
⎯
⎯
⎯
ns
Internal read to precharge command delay tRTP
7.5
7.5
ns
Exit self-refresh to a non-read command
Exit self-refresh to a read command
tXSNR
tRFC + 10
200
tRFC + 10
200
ns
tXSRD
tXP
nCK
Exit precharge power-down to any non-read
command
2
⎯
⎯
⎯
2
⎯
⎯
⎯
nCK
nCK
nCK
Exit active power-down to read command
tXARD
tXARDS
2
2
3
Exit active power-down to read command
(slow exit/low power mode)
8 − AL
7 − AL
2, 3
CKE minimum pulse width (high and low
pulse width)
tCKE
3
⎯
3
⎯
nCK
Output impedance test driver delay
MRS command to ODT update delay
tOIT
0
0
12
12
0
0
12
12
ns
ns
tMOD
Auto-refresh to active/auto-refresh
command time
tRFC
127.5
⎯
127.5
⎯
ns
Average periodic refresh interval
(0°C ≤ TC ≤ +85°C)
tREFI
⎯
⎯
7.8
3.9
⎯
⎯
⎯
7.8
3.9
⎯
μs
μs
ns
(+85°C < TC ≤ +95°C)
tREFI
Minimum time clocks remains ON after CKE
asynchronously drops low
tIS + tCK(avg)
+ tIH
tIS + tCK(avg)
+ tIH
tDELAY
Data Sheet E0852E50 (Ver. 5.0)
15
ELPIDA [ ELPIDA MEMORY ]
