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EDD51323DBH-6ELS-F 参数 Datasheet PDF下载

EDD51323DBH-6ELS-F图片预览
型号: EDD51323DBH-6ELS-F
PDF下载: 下载PDF文件 查看货源
内容描述: 512M DDR位移动RAM ™ WTR (宽温度范围) ,低功耗功能 [512M bits DDR Mobile RAM™ WTR (Wide Temperature Range), Low Power Function]
分类和应用: 双倍数据速率
文件页数/大小: 60 页 / 761 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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EDD51323DBH-LS  
Bank Active Command Interval  
Destination row of the consecutive ACT  
command  
Bank  
address  
Row address  
State  
Operation  
Two successive ACT commands can be issued at tRC interval. In between two  
1. Same  
2. Different  
Any  
Any  
ACTIVE  
successive ACT operations, precharge command should be executed.  
Precharge the bank. tRP after the precharge command, the consecutive ACT  
command can be issued.  
tRRD after an ACT command, the next ACT command can be issued.  
ACTIVE  
IDLE  
CK  
/CK  
Command  
A
C
T
ACT  
NOP  
PRE  
NOP  
ACT  
NOP  
Address  
BA  
ROW: 0  
ROW: 1  
ROW: 0  
Bank0  
Active  
Bank3  
Active  
Bank0  
Precharge  
Bank0  
Active  
tRRD  
tRC  
Bank Active to Bank Active  
Mode Register Set to Bank-Active Command Interval  
The interval between setting the mode register and executing a bank-active command must be no less than tMRD.  
CK  
/CK  
Command  
MRS  
NOP  
ACT  
NOP  
Address  
CODE  
BS and ROW  
Mode Register Set  
Bank3  
Active  
tMRD  
Mode Register Set to Bank Active  
Preliminary Data Sheet E1432E20 (Ver. 2.0)  
44  
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