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EDD51323DBH-6ELS-F 参数 Datasheet PDF下载

EDD51323DBH-6ELS-F图片预览
型号: EDD51323DBH-6ELS-F
PDF下载: 下载PDF文件 查看货源
内容描述: 512M DDR位移动RAM ™ WTR (宽温度范围) ,低功耗功能 [512M bits DDR Mobile RAM™ WTR (Wide Temperature Range), Low Power Function]
分类和应用: 双倍数据速率
文件页数/大小: 60 页 / 761 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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EDD51323DBH-LS  
A Write Command to the Consecutive Precharge Command Interval (same bank)  
Operation by each case of destination bank of the consecutive Precharge command.  
Bank address  
Operation  
The PRE and PALL command can interrupt a write operation.  
1.  
2.  
Same  
To complete a burst write operation, tWPD is required between the write and the precharge  
command. Please refer to the following timing chart.  
The PRE command does not interrupt a write command.  
No interval timing is required between the write and the precharge command.  
Different  
WRITE to PRECHARGE Command Interval (same bank)  
The minimum interval tWPD is necessary between the write command and the precharge command.  
t0  
t1  
t2  
t3  
t4  
tn  
tn + 1  
tn + 2  
CK  
/CK  
Command  
PRE/PALL  
WRIT  
NOP  
tWPD  
NOP  
tWR  
DM  
DQS  
DQ  
in0  
in1  
in2  
in3  
Last data input  
WRITE to PRECHARGE Command Interval (same bank) (BL = 4)  
Preliminary Data Sheet E1432E20 (Ver. 2.0)  
42  
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