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EDD51323DBH-6ELS-F 参数 Datasheet PDF下载

EDD51323DBH-6ELS-F图片预览
型号: EDD51323DBH-6ELS-F
PDF下载: 下载PDF文件 查看货源
内容描述: 512M DDR位移动RAM ™ WTR (宽温度范围) ,低功耗功能 [512M bits DDR Mobile RAM™ WTR (Wide Temperature Range), Low Power Function]
分类和应用: 双倍数据速率
文件页数/大小: 60 页 / 761 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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EDD51323DBH-LS  
A Write Command to the Consecutive Read Command Interval: To Interrupt the Write Operation  
Destination row of the consecutive read  
command  
Bank  
Row address State  
address  
Operation  
DM must be input 1 cycle prior to the read command input to prevent from being  
written invalid data. In case, the read command is input in the next cycle of the  
write command, DM is not necessary.  
1. Same  
2. Same  
3. Different  
Same  
Different  
Any  
ACTIVE  
—*1  
DM must be input 1 cycle prior to the read command input to prevent from being  
written invalid data. In case, the read command is input in the next cycle of the  
write command, DM is not necessary.  
ACTIVE  
IDLE  
—*1  
Note: 1. Precharge must be preceded to read command. Therefore read command can not interrupt the write  
operation in this case.  
WRITE to READ Command Interval (Same bank, same ROW address)  
t0  
t1  
t2  
t3  
t4  
t5  
t6  
t7  
t8  
CK  
/CK  
Command  
WRIT  
READ  
NOP  
DM  
High-Z  
High-Z  
DQ  
in0 in1 in2  
out0 out1 out2 out3  
DQS  
BL = 4  
CL = 3  
Data masked  
[WRITE to READ delay = 1 clock cycle]  
Preliminary Data Sheet E1432E20 (Ver. 2.0)  
37  
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