EDD51323DBH-LS
A Read Command to the Consecutive Write Command Interval with the BST Command
Destination row of the consecutive write
command
Bank
Row address State
address
Operation
Issue the BST command. tBSTW (≥ tBSTZ) after the BST command, the
1. Same
2. Same
3. Different
Same
Different
Any
ACTIVE
consecutive write command can be issued.
Precharge the bank to interrupt the preceding read operation. tRP after the
precharge command, issue the ACT command. tRCD after the ACT command, the
consecutive write command can be issued. See ‘A read command to the
consecutive precharge interval’ section.
Issue the BST command. tBSTW (≥ tBSTZ) after the BST command, the
consecutive write command can be issued.
Precharge the bank independently of the preceding read operation. tRP after the
precharge command, issue the ACT command. tRCD after the ACT command, the
consecutive write command can be issued.
—
ACTIVE
IDLE
t0
t1
t2
t3
t4
t5
t6
t7
t8
CK
/CK
Command
READ
BST
NOP
tBSTW (≥ tBSTZ)
WRIT
NOP
DM
tBSTZ (= CL)
DQ
out0 out1
in0 in1 in2 in3
High-Z
DQS
OUTPUT
INPUT
BL = 4
CL = 3
READ to WRITE Command Interval
Preliminary Data Sheet E1432E20 (Ver. 2.0)
35
ELPIDA [ ELPIDA MEMORY ]
