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EDD51323DBH-6ELS-F 参数 Datasheet PDF下载

EDD51323DBH-6ELS-F图片预览
型号: EDD51323DBH-6ELS-F
PDF下载: 下载PDF文件 查看货源
内容描述: 512M DDR位移动RAM ™ WTR (宽温度范围) ,低功耗功能 [512M bits DDR Mobile RAM™ WTR (Wide Temperature Range), Low Power Function]
分类和应用: 双倍数据速率
文件页数/大小: 60 页 / 761 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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EDD51323DBH-LS  
Function Truth Table  
The following tables show the operations that are performed when each command is issued in each state of the  
DDR Mobile RAM.  
Current state  
Precharging*1  
/CS  
H
L
/RAS /CAS /WE Address  
Command  
Operation  
×
×
×
×
DESL  
NOP  
H
H
H
H
L
H
H
L
H
L
×
NOP  
NOP  
L
×
BST  
ILLEGAL*11  
ILLEGAL*11  
ILLEGAL*11  
ILLEGAL*11  
NOP  
L
H
L
BA, CA, A10  
BA, CA, A10  
BA, RA  
BA, A10  
×
READ/READA  
WRIT/WRITA  
ACT  
L
L
L
H
H
L
H
L
L
L
PRE, PALL  
L
L
×
ILLEGAL  
NOP  
Idle*2  
H
L
×
×
×
×
DESL  
H
H
H
H
L
H
H
L
H
L
×
NOP  
NOP  
L
×
BST  
NOP  
L
H
L
BA, CA, A10  
BA, CA, A10  
BA, RA  
BA, A10  
READ/READA  
WRIT/WRITA  
ACT  
ILLEGAL*11  
ILLEGAL*11  
Activating  
NOP  
L
L
L
H
H
H
L
L
L
PRE, PALL  
Refresh/  
L
L
H
L
L
×
L
L
×
H
L
×
REF, SELF  
MRS  
Self-refresh*12  
MODE  
Mode register set*12  
Refresh  
×
×
DESL  
NOP  
(auto-refresh)*3  
L
H
L
L
H
L
L
L
L
L
L
L
H
L
L
L
L
L
L
L
H
H
H
L
H
H
L
H
L
×
NOP  
BST  
NOP  
×
ILLEGAL  
×
×
×
H
L
×
ILLEGAL  
×
×
ILLEGAL  
Activating*4  
×
×
×
DESL  
NOP  
H
H
H
H
L
H
H
L
×
NOP  
NOP  
×
BST  
ILLEGAL*11  
ILLEGAL*11  
ILLEGAL*11  
ILLEGAL*11  
ILLEGAL*11  
ILLEGAL  
H
L
BA, CA, A10  
READ/READA  
WRIT/WRITA  
ACT  
L
BA, CA, A10  
H
H
L
H
L
BA, RA  
L
BA, A10  
PRE, PALL  
L
×
×
H
L
×
Active*5  
×
×
×
DESL  
NOP  
H
H
H
H
L
H
H
L
×
NOP  
NOP  
×
BST  
NOP  
H
L
BA, CA, A10  
BA, CA, A10  
BA, RA  
BA, A10  
×
READ/READA  
WRIT/WRITA  
ACT  
Starting read operation  
Starting write operation  
ILLEGAL*11  
Pre-charge  
ILLEGAL  
L
H
H
L
H
L
L
PRE, PALL  
L
×
Preliminary Data Sheet E1432E20 (Ver. 2.0)  
17  
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