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EDD51323DBH-6ELS-F 参数 Datasheet PDF下载

EDD51323DBH-6ELS-F图片预览
型号: EDD51323DBH-6ELS-F
PDF下载: 下载PDF文件 查看货源
内容描述: 512M DDR位移动RAM ™ WTR (宽温度范围) ,低功耗功能 [512M bits DDR Mobile RAM™ WTR (Wide Temperature Range), Low Power Function]
分类和应用: 双倍数据速率
文件页数/大小: 60 页 / 761 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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EDD51323DBH-LS  
Row address strobe and bank activate [ACT]  
This command activates the bank that is selected by BA0 and BA1 (See Bank Select Signal Table) and determines  
the row address (Address Pins Table in “Pin Function”).  
Precharge selected bank [PRE]  
This command starts precharge operation for the bank selected by BA0 and BA1. (See Bank Select Signal Table)  
[Bank Select Signal Table]  
BA0  
L
BA1  
L
Bank 0  
Bank 1  
H
L
Bank 2  
L
H
Bank 3  
H
H
Remark: H: VIH. L: VIL.  
Precharge all banks [PALL]  
This command starts a precharge operation for all banks.  
Refresh [REF/SELF]  
This command starts a refresh operation. There are two types of refresh operation, one is auto-refresh, and another  
is self-refresh. For details, refer to the CKE truth table section.  
Mode register set/Extended mode register set [MRS/EMRS]  
The DDR Mobile RAM has the two mode registers, the mode register and the extended mode register, to defines  
how it works. The both mode registers are set through the address pins in the mode register set cycle. For details,  
refer to "Mode register and extended mode register set".  
Preliminary Data Sheet E1432E20 (Ver. 2.0)  
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