欢迎访问ic37.com |
会员登录 免费注册
发布采购

EDD5104ABTA-7B 参数 Datasheet PDF下载

EDD5104ABTA-7B图片预览
型号: EDD5104ABTA-7B
PDF下载: 下载PDF文件 查看货源
内容描述: 512M比特DDR SDRAM [512M bits DDR SDRAM]
分类和应用: 存储内存集成电路光电二极管动态存储器双倍数据速率时钟
文件页数/大小: 50 页 / 438 K
品牌: ELPIDA [ ELPIDA MEMORY ]
 浏览型号EDD5104ABTA-7B的Datasheet PDF文件第3页浏览型号EDD5104ABTA-7B的Datasheet PDF文件第4页浏览型号EDD5104ABTA-7B的Datasheet PDF文件第5页浏览型号EDD5104ABTA-7B的Datasheet PDF文件第6页浏览型号EDD5104ABTA-7B的Datasheet PDF文件第8页浏览型号EDD5104ABTA-7B的Datasheet PDF文件第9页浏览型号EDD5104ABTA-7B的Datasheet PDF文件第10页浏览型号EDD5104ABTA-7B的Datasheet PDF文件第11页  
EDD5104ABTA, EDD5108ABTA  
-6B  
-7A  
-7B  
min.  
max.  
min.  
0.9  
0.9  
2.2  
max  
min.  
max.  
Parameter  
Symbol  
Unit  
Notes  
Address and control input setup time tIS  
0.75  
0.75  
2.2  
0.9  
0.9  
2.2  
Address and control input hold time tIH  
Address and control input pulse  
width  
ns  
ns  
8
7
tIPW  
Mode register set command cycle  
tMRD  
tRAS  
tRC  
2
2
2
tCK  
time  
Active to Precharge command  
period  
Active to Active/Auto refresh  
command period  
Auto refresh to Active/Auto refresh  
command period  
Active to Read/Write delay  
42  
60  
72  
120000 45  
120000 45  
120000 ns  
67.5  
67.5  
ns  
ns  
tRFC  
tRCD  
75  
75  
18  
20  
20  
ns  
ns  
ns  
ns  
ns  
Precharge to active command period tRP  
18  
20  
20  
Active to Autoprecharge delay  
Active to active command period  
Write recovery time  
tRAP  
tRCD min.  
tRCD min.  
tRCD min.  
tRRD  
tWR  
12  
15  
15  
15  
15  
15  
Auto precharge write recovery and  
precharge time  
(tWR/tCK)+  
(tRP/tCK)  
(tWR/tCK)+  
(tRP/tCK)  
(tWR/tCK)+  
(tRP/tCK)  
tDAL  
tCK  
13  
Internal write to Read command  
delay  
Average periodic refresh interval  
tWTR  
tREF  
1
1
1
tCK  
µs  
7.8  
7.8  
7.8  
Notes: 1. On all AC measurements, we assume the test conditions shown in the next page. For timing parameter  
definitions, see ‘Timing Waveforms’ section.  
2. This parameter defines the signal transition delay from the cross point of CK and /CK. The signal  
transition is defined to occur when the signal level crossing VTT.  
3. The timing reference level is VTT.  
4. Output valid window is defined to be the period between two successive transition of data out or DQS  
(read) signals. The signal transition is defined to occur when the signal level crossing VTT.  
5. tHZ is defined as DOUT transition delay from Low-Z to High-Z at the end of read burst operation. The  
timing reference is cross point of CK and /CK. This parameter is not referred to a specific DOUT voltage  
level, but specify when the device output stops driving.  
6. tLZ is defined as DOUT transition delay from High-Z to Low-Z at the beginning of read operation. This  
parameter is not referred to a specific DOUT voltage level, but specify when the device output begins  
driving.  
7. Input valid windows is defined to be the period between two successive transition of data input or DQS  
(write) signals. The signal transition is defined to occur when the signal level crossing VREF.  
8. The timing reference level is VREF.  
9. The transition from Low-Z to High-Z is defined to occur when the device output stops driving. A specific  
reference voltage to judge this transition is not given.  
10. tCK (max.) is determined by the lock range of the DLL. Beyond this lock range, the DLL operation is not  
assured.  
11. tCK = tCK (min.) when these parameters are measured. Otherwise, absolute minimum values of these  
values are 10% of tCK.  
12. VDD is assumed to be 2.5V ± 0.2V. VDD power supply variation per cycle expected to be less than  
0.4V/400 cycle.  
13. tDAL = (tWR/tCK)+(tRP/tCK)  
For each of the terms above, if not already an integer, round to the next highest integer.  
Example: For –7A Speed at CL = 2.5, tCK = 7.5ns, tWR = 15ns and tRP= 20ns,  
tDAL = (15ns/7.5ns) + (20ns/7.5ns) = (2) + (3)  
tDAL = 5 clocks  
Preliminary Data Sheet E0237E30 (Ver. 3.0)  
7